| No. |
Part Name |
Description |
Manufacturer |
| 121 |
10616 |
Triple Line Receiver |
Motorola |
| 122 |
10710A |
10710A Adjustable Mount |
Agilent (Hewlett-Packard) |
| 123 |
10710B |
10710B Adjustable Mount |
Agilent (Hewlett-Packard) |
| 124 |
10711A |
10711A Adjustable Mount |
Agilent (Hewlett-Packard) |
| 125 |
108T2 |
NPN power transistor Triple Diffused - Fast switching |
SESCOSEM |
| 126 |
109T2 |
NPN power transistor Triple Diffused - Fast switching |
SESCOSEM |
| 127 |
10H20EV8 |
ECL programmable array logic |
Philips |
| 128 |
10H20EV8-4A |
ECL programmable array logic |
Philips |
| 129 |
10H20EV8-4F |
ECL programmable array logic |
Philips |
| 130 |
10KE |
Embedded Programmable Logic Device |
Altera Corporation |
| 131 |
10PM03 |
10A Single Phase Rectifier Bridge 30V |
IPRS Baneasa |
| 132 |
10PM05 |
10A Single Phase Rectifier Bridge 50V |
IPRS Baneasa |
| 133 |
10PM1 |
10A Single Phase Rectifier Bridge 100V |
IPRS Baneasa |
| 134 |
10PM2 |
10A Single Phase Rectifier Bridge 200V |
IPRS Baneasa |
| 135 |
10PM4 |
10A Single Phase Rectifier Bridge 400V |
IPRS Baneasa |
| 136 |
10PM4AC |
10A Single Phase, Avalanche Controlled Rectifier Bridge 400V |
IPRS Baneasa |
| 137 |
10PM6AC |
10A Single Phase, Avalanche Controlled Rectifier Bridge 600V |
IPRS Baneasa |
| 138 |
10PM8AC |
10A Single Phase, Avalanche Controlled Rectifier Bridge 800V |
IPRS Baneasa |
| 139 |
10SI05 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 50V |
IPRS Baneasa |
| 140 |
10SI05R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 50V |
IPRS Baneasa |
| 141 |
10SI1 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V |
IPRS Baneasa |
| 142 |
10SI10 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V |
IPRS Baneasa |
| 143 |
10SI10R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1000V |
IPRS Baneasa |
| 144 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
| 145 |
10SI12R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V |
IPRS Baneasa |
| 146 |
10SI1R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 100V |
IPRS Baneasa |
| 147 |
10SI2 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 200V |
IPRS Baneasa |
| 148 |
10SI2R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 200V |
IPRS Baneasa |
| 149 |
10SI3 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 300V |
IPRS Baneasa |
| 150 |
10SI3R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 300V |
IPRS Baneasa |
| | | |
