| No. |
Part Name |
Description |
Manufacturer |
| 121 |
16M0WC |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 122 |
16M0WS |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 123 |
16M0X |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 124 |
16M0XC |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 125 |
16M0XS |
60V 300mA MONOLITHIC DIODE ARRAY |
Microsemi |
| 126 |
1M3820 |
Controlled Gamma Tuning Diodes |
MSI Electronics |
| 127 |
1N2069 |
750MA SILICON RECTIFIER DIODES |
International Rectifier |
| 128 |
1N2069A |
750MA SILICON RECTIFIER DIODES |
International Rectifier |
| 129 |
1N2070 |
750MA SILICON RECTIFIER DIODES |
International Rectifier |
| 130 |
1N2070A |
750MA SILICON RECTIFIER DIODES |
International Rectifier |
| 131 |
1N2071 |
750MA SILICON RECTIFIER DIODES |
International Rectifier |
| 132 |
1N2071A |
750MA SILICON RECTIFIER DIODES |
International Rectifier |
| 133 |
1N3282 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 700V |
Motorola |
| 134 |
1N3283 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1050V |
Motorola |
| 135 |
1N3284 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1400V |
Motorola |
| 136 |
1N3285 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1750V |
Motorola |
| 137 |
1N3286 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 2100V |
Motorola |
| 138 |
1N4099-1 |
SILICON 500mA LOW NOISE ZENER DIODES |
Microsemi |
| 139 |
1N4150 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 200mA If |
Continental Device India Limited |
| 140 |
1N4151 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 50mA If |
Continental Device India Limited |
| 141 |
1N4378 |
Photosensitive Device I(dark)=10nA Sensitivity=9.0mA Vce=5.0V H=9.0 mW/cm2 |
Motorola |
| 142 |
1N5711WS-7 |
70V; 15mA surface mount schottky barrier diode. Ideally suited for automatic insertion |
Diodes |
| 143 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 144 |
1N914B |
500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If |
Continental Device India Limited |
| 145 |
1PS66SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
Nexperia |
| 146 |
1PS66SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
NXP Semiconductors |
| 147 |
1PS66SB17 |
4 V, 30 mA low C_d Schottky barrier diode |
Philips |
| 148 |
1PS66SB62 |
40 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 149 |
1PS66SB62 |
1PS66SB62; 1PS76SB62; 40 V, 20 mA low C_d Schottky barrier diodes |
Philips |
| 150 |
1PS66SB63 |
5 V, 20 mA low C_d Schottky barrier diodes |
Philips |
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