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Datasheets for MITSUBISH

Datasheets found :: 37424
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 74273 OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET Mitsubishi Electric Corporation
122 74LS OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) Mitsubishi Electric Corporation
123 74LS244 OCTAL BUFFER/LINE DRIVERS WITH 3-STATE OUTPUT(NONINVERTED) Mitsubishi Electric Corporation
124 74LS273 OCTAL POSITIVE EDGE-TRIGGERED D-TYPE FLIP FLOP WITH RESET Mitsubishi Electric Corporation
125 7531 GROUP Single Chip 8-Bit CMOS Microcomputer Mitsubishi Electric Corporation
126 7531 GROUP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER Mitsubishi Electric Corporation
127 BA01202 GaAs HBT HYBRID IC Mitsubishi Electric Corporation
128 BA01203 GaAs HBT HYBRID IC Mitsubishi Electric Corporation
129 BA01207 GaAs HBT HYBRID IC Mitsubishi Electric Corporation
130 BCR08AM-14 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
131 BCR08AM-14 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
132 BCR08AM-14 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
133 BCR08AS-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
134 BCR08AS-8 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
135 BCR08AS-8 MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
136 BCR10CM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
137 BCR10CM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
138 BCR10CM-12 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
139 BCR10CM-8 Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
140 BCR10CS MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
141 BCR10CS MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
142 BCR10CS Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
143 BCR10PM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
144 BCR10PM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
145 BCR10PM Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
146 BCR10UM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
147 BCR10UM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Mitsubishi Electric Corporation
148 BCR12 MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
149 BCR12CM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation
150 BCR12CM MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE Mitsubishi Electric Corporation


Datasheets found :: 37424
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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