No. |
Part Name |
Description |
Manufacturer |
121 |
HMM55C6V2 |
ZENER DIODES |
Hi-Sincerity Microelectronics |
122 |
HMM55C6V8 |
ZENER DIODES |
Hi-Sincerity Microelectronics |
123 |
HMM55C7V5 |
ZENER DIODES |
Hi-Sincerity Microelectronics |
124 |
HMM55C8V2 |
ZENER DIODES |
Hi-Sincerity Microelectronics |
125 |
HMM55C9V1 |
ZENER DIODES |
Hi-Sincerity Microelectronics |
126 |
KMM594000 |
4M x 9 CMOS DRAM Memory Module |
Samsung Electronic |
127 |
KMM594000-10 |
4M x 9 CMOS DRAM Memory Module |
Samsung Electronic |
128 |
KMM594000-8 |
4M x 9 CMOS DRAM Memory Module |
Samsung Electronic |
129 |
KMM594000A |
4M x 9 CMOS SIMM Memory Module |
Samsung Electronic |
130 |
KMM594000A-10 |
4M x 9 CMOS SIMM Memory Module |
Samsung Electronic |
131 |
KMM594000A-7 |
4M x 9 CMOS SIMM Memory Module |
Samsung Electronic |
132 |
KMM594000A-8 |
4M x 9 CMOS SIMM Memory Module |
Samsung Electronic |
133 |
KMM594000B |
4M x 9 CMOS DRAM SIMM Memory Module |
Samsung Electronic |
134 |
KMM594000B-6 |
4M x 9 CMOS DRAM SIMM Memory Module |
Samsung Electronic |
135 |
KMM594000B-7 |
4M x 9 CMOS DRAM SIMM Memory Module |
Samsung Electronic |
136 |
KMM594000B-8 |
4M x 9 CMOS DRAM SIMM Memory Module |
Samsung Electronic |
137 |
MM5000 |
PNP germanium high-frequency transistor designed for use in low-noise, high-gain VHF/UHF amplifiers |
Motorola |
138 |
MM5001 |
PNP germanium high-frequency transistor designed for use in low-noise, high-gain VHF/UHF amplifiers |
Motorola |
139 |
MM5002 |
PNP germanium high-frequency transistor designed for use in low-noise, high-gain VHF/UHF amplifiers |
Motorola |
140 |
MM5005 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
141 |
MM5034 |
Octal 80-Bit Static Shift Register |
National Semiconductor |
142 |
MM5034N |
Octal 80-Bit Static Shift Register |
National Semiconductor |
143 |
MM5035 |
Octal 80-Bit Static Shift Register |
National Semiconductor |
144 |
MM5035N |
Octal 80-Bit Static Shift Register |
National Semiconductor |
145 |
MM5303 |
Universal fully asynchronous receiver/transmitter general description |
National Semiconductor |
146 |
MM5307 |
Baud rate generator/programmable divider |
National Semiconductor |
147 |
MM5309 |
Using National Clock integrated circuits in TIMER applications - Application Note |
National Semiconductor |
148 |
MM5309 |
DIGITAL CLOCKS |
National Semiconductor |
149 |
MM5309M |
+0.3 to -20V; ; digital clock monolithic MOS integarted circuit. For desk clocks, automobile clocks, industrial clocks, interval timers |
National Semiconductor |
150 |
MM5309N |
DIGITAL CLOCKS |
National Semiconductor |
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