| No. |
Part Name |
Description |
Manufacturer |
| 121 |
APT8065 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 122 |
APT8075 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 123 |
AS-TQFP44 |
TQFP44 (10x10) socket and cover to solder to an application board for connection of ST emulators. |
ST Microelectronics |
| 124 |
AT85C5122 |
C51 Microcontroller with 7-Endpoint USB Controller, Smart Card Reader Interfaces ISO7816 compliant, DC/DC Converter and 32K bytes Code RAM. A pre-certified version of this product with Omnikey software is available: |
Atmel |
| 125 |
AT89C5122 |
C51 Microcontroller with 7-Endpoint USB Controller, Smart Card Reader Interfaces ISO7816 compliant, DC/DC Converter and 32K bytes Flash. A pre-certified version of this product with Omnikey software is available: |
Atmel |
| 126 |
ATU18 |
The ATU18 series of ULCs is well suited for conversion of latest CPLDs and FPGAs. We can support within one ULC from 62 Kbits to 1195 Kbits DPRAM and from 82 Kgates to 1575 Kgates. |
Atmel |
| 127 |
BD643 |
8 A N-P-N darlington power transistor. 45 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 128 |
BD645 |
8 A N-P-N darlington power transistor. 60 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 129 |
BD647 |
8 A N-P-N darlington power transistor. 80 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 130 |
BD649 |
8 A N-P-N darlington power transistor. 100 V. 70 W. Gain of 750 at 3 A. |
General Electric Solid State |
| 131 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 132 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 133 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 134 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 135 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 136 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 137 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 138 |
BGY13FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 139 |
BGY14D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 140 |
BGY14E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 141 |
BGY14FA1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 142 |
BGY26D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 143 |
BGY26E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 144 |
BGY26FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 145 |
BGY27DA-1D |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 146 |
BGY27DB-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 147 |
BGY27E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 148 |
BTS 7741 G |
210mOhm TrilithIC Open Load in Off |
Infineon |
| 149 |
BTS 7751 G |
115mOhm TrilithIC Open Load in Off |
Infineon |
| 150 |
BTS7741G |
Smart Motorbridges + Driver ICs - 210mOhm TrilithIC Open Load in Off |
Infineon |
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