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Datasheets for RF2

Datasheets found :: 1261
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 FRF250D 23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs Intersil
122 FRF250H 23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs Intersil
123 FRF250R 23A/ 200V/ 0.115 Ohm/ Rad Hard/ N-Channel Power MOSFETs Intersil
124 FRF254D 17A/ 250V/ 0.185 Ohm/ Rad Hard/ N-Channel Power MOSFETs Intersil
125 FRF254H 17A/ 250V/ 0.185 Ohm/ Rad Hard/ N-Channel Power MOSFETs Intersil
126 FRF254R 17A/ 250V/ 0.185 Ohm/ Rad Hard/ N-Channel Power MOSFETs Intersil
127 HD6417750RF200 1.5V; 200MHz; 32-bit RISC microprocessor Hitachi Semiconductor
128 HD6417750RF240 1.5V; 240MHz; 32-bit RISC microprocessor Hitachi Semiconductor
129 HRF22 Silicon Schottky Barrier Diode for Rectifying Hitachi Semiconductor
130 IRF200 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED etc
131 IRF200S100RJ 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED etc
132 IRF220 N-Channel Power MOSFETs/ 7A/ 150-200V Fairchild Semiconductor
133 IRF220 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
134 IRF220 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs Intersil
135 IRF220 Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
136 IRF220 N-CHANNEL POWER MOSFETS Samsung Electronic
137 IRF220-223 N-Channel Power MOSFETs/ 7A/ 150-200V Fairchild Semiconductor
138 IRF2204 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
139 IRF2204L 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
140 IRF2204LPBF 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
141 IRF2204PBF 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
142 IRF2204S 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
143 IRF2204SPBF 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
144 IRF221 N-Channel Power MOSFETs/ 7A/ 150-200V Fairchild Semiconductor
145 IRF221 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
146 IRF221 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs Intersil
147 IRF221 Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
148 IRF221 N-CHANNEL POWER MOSFETS Samsung Electronic
149 IRF222 N-Channel Power MOSFETs/ 7A/ 150-200V Fairchild Semiconductor
150 IRF222 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State


Datasheets found :: 1261
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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