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Datasheets for SH C

Datasheets found :: 670
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 ISL6152 Hot Plug Controller, Negative Voltage, -20V to -80V, Prog Inrush Current, IntelliTrip� Current Regulation, UV/OV Protection, Prog Time Out, Load current monitor, Active high PWRGD Intersil
122 K4E151611D-J 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. Samsung Electronic
123 K4E151611D-T 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. Samsung Electronic
124 K4E151612D-J 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. Samsung Electronic
125 K4E151612D-T 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. Samsung Electronic
126 K4E160411D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
127 K4E160411D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
128 K4E160412D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
129 K4E160412D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
130 K4E160811D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
131 K4E160811D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
132 K4E160812D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
133 K4E160812D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
134 K4E170411D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
135 K4E170411D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
136 K4E170412D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
137 K4E170412D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
138 K4E170811D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
139 K4E170811D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
140 K4E170812D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
141 K4E170812D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
142 K4E171611D-J 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
143 K4E171611D-T 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
144 K4E171612D-J 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
145 K4E171612D-T 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
146 K4E640412D-JC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. Samsung Electronic
147 K4E640412D-TC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. Samsung Electronic
148 K4E660412D-JC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. Samsung Electronic
149 K4E660412D-TC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. Samsung Electronic
150 K4F151611D-J 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. Samsung Electronic


Datasheets found :: 670
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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