No. |
Part Name |
Description |
Manufacturer |
151 |
HEF4081BU |
Quadruple 2-input AND gate |
Philips |
152 |
HIP4081 |
Driver, Full Bridge FET, High Frequency, 80V/2.5A Peak, Independent 4 N-Channel FET Driver |
Intersil |
153 |
HIP4081A |
Driver, Full Bridge FET, Independent 4 N-Channel FET Driver |
Intersil |
154 |
HIP4081AIB |
80V/2.5A Peak/ High Frequency Full Bridge FET Driver |
Intersil |
155 |
HIP4081AIP |
80V/2.5A Peak/ High Frequency Full Bridge FET Driver |
Intersil |
156 |
HIP4081IB |
80V/2.5A Peak/ High Frequency Full Bridge FET Driver |
Intersil |
157 |
HIP4081IP |
80V/2.5A Peak/ High Frequency Full Bridge FET Driver |
Intersil |
158 |
IDT72V14081 |
4K x 8 Multimedia FIFO, 3.3V |
IDT |
159 |
IDT72V14081L15PFI |
4K x 8 Multimedia FIFO, 3.3V |
IDT |
160 |
IDT72V14081L15PFI8 |
4K x 8 Multimedia FIFO, 3.3V |
IDT |
161 |
IW4081BD |
Quad 2-input AND gate, high-voltage silicon-gate CMOS |
INTEGRAL |
162 |
IW4081BN |
Quad 2-input AND gate, high-voltage silicon-gate CMOS |
INTEGRAL |
163 |
K4E640812B |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
164 |
K4E640812B-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
165 |
K4E640812B-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
166 |
K4E640812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
167 |
K4E640812B-JCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
168 |
K4E640812B-JCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
169 |
K4E640812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
170 |
K4E640812B-TC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
171 |
K4E640812B-TC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
172 |
K4E640812B-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
173 |
K4E640812B-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
174 |
K4E640812B-TCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
175 |
K4E640812B-TCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
176 |
K4E640812C |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
177 |
K4E640812C-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
178 |
K4E640812C-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
179 |
K4E640812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
180 |
K4E640812C-JCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
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