No. |
Part Name |
Description |
Manufacturer |
181 |
2N4401TA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
182 |
2N4401TAR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
183 |
2N4401TF |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
184 |
2N4401TFR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
185 |
2N4401ZL1 |
General Purpose Transistors |
ON Semiconductor |
186 |
2N4401_D81Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
187 |
2N4401_J05Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
188 |
2N4401_J18Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
189 |
2N4401_J25Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
190 |
2N4401_J60Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
191 |
2N4401_J61Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
192 |
2N5401 |
PNP Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
193 |
2N5401 |
AMPLIFIER TRANSISTOR PNP SILICON |
Boca Semiconductor Corporation |
194 |
2N5401 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
195 |
2N5401 |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
196 |
2N5401 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
197 |
2N5401 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
198 |
2N5401 |
High Voltage Transistor |
Korea Electronics (KEC) |
199 |
2N5401 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
200 |
2N5401 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
201 |
2N5401 |
PNP General Purpose Amplifier |
National Semiconductor |
202 |
2N5401 |
Trans GP BJT PNP 150V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
203 |
2N5401 |
Small Signal Amplifier PNP |
ON Semiconductor |
204 |
2N5401 |
Small Signal Amplifier PNP |
ON Semiconductor |
205 |
2N5401 |
PNP high-voltage transistor |
Philips |
206 |
2N5401 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
207 |
2N5401 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
208 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
209 |
2N5401-D |
Amplifier Transistors PNP Silicon |
ON Semiconductor |
210 |
2N5401-T |
Transistor |
Rectron Semiconductor |
| | | |