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Datasheets for AUDIO

Datasheets found :: 9909
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 2SA966 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS TOSHIBA
182 2SA970 Transistor Silicon PNP Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications TOSHIBA
183 2SA992 Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. USHA India LTD
184 2SB1015 Silicon PNP triple diffused audio frequency power transistor TOSHIBA
185 2SB1015 TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) TOSHIBA
186 2SB1015A Transistor Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier Applications TOSHIBA
187 2SB1116 Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. USHA India LTD
188 2SB1116A Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. USHA India LTD
189 2SB1375 TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER TOSHIBA
190 2SB1475 PNP SILICON EPITAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER NEC
191 2SB156 Germanium PNP Transistor Alloyed Junction Vcbo=-16V, Vebo=-2.5V, intended for use in Audio Frequency Power Output Hitachi Semiconductor
192 2SB156A Germanium PNP Transistor Alloyed Junction Vcbo=-20V, Vebo=-6V, intended for use in Audio Frequency Power Output Hitachi Semiconductor
193 2SB1640 TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER TOSHIBA
194 2SB1642 TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER TOSHIBA
195 2SB1657 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS NEC
196 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS NEC
197 2SB1667 TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) TOSHIBA
198 2SB1667(SM) TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS TOSHIBA
199 2SB189 Germanium PNP alloy junction transistor, audio medium power amplifier applications TOSHIBA
200 2SB331H Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching Hitachi Semiconductor
201 2SB332H Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching Hitachi Semiconductor
202 2SB333H Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching Hitachi Semiconductor
203 2SB334H Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, High Power Switching Hitachi Semiconductor
204 2SB337 Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output Hitachi Semiconductor
205 2SB337 GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT Unknow
206 2SB337H Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output Hitachi Semiconductor
207 2SB338H Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output Hitachi Semiconductor
208 2SB339H Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output Hitachi Semiconductor
209 2SB340H Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output Hitachi Semiconductor
210 2SB341H Germanium PNP Alloyed Junction Transistor, intended for use in High Power Switching, DC-DC Converter, DC-AC Inverter, Audio Frequency Power Output Hitachi Semiconductor


Datasheets found :: 9909
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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