No. |
Part Name |
Description |
Manufacturer |
181 |
CSPEMI202AG |
2-Channel Headset Microphone CSP EMI Filters with ESD Protection |
ON Semiconductor |
182 |
CSPEMI204 |
2 Channel Headset EMI Filter with ESD Protection @ ±8kV (IEC61000-4-2 Level 4 Contact Discharge), Chip Scale Package |
California Micro Devices Corp |
183 |
CSPEMI204G |
2 Channel Headset EMI Filter with ESD Protection @ ±8kV (IEC61000-4-2 Level 4 Contact Discharge), Chip Scale Package |
California Micro Devices Corp |
184 |
CSPEMI205 |
3 Channel Headset EMI Filter with ESD Protection @ ±8kV (IEC61000-4-2 Level 4 Contact Discharge), Chip Scale Package |
California Micro Devices Corp |
185 |
CSPEMI205G |
3 Channel Headset EMI Filter with ESD Protection @ ±8kV (IEC61000-4-2 Level 4 Contact Discharge), Chip Scale Package |
California Micro Devices Corp |
186 |
CSPEMI205G |
3-Channel Single Mic / Stereo Speaker CSP EMI Filters with ESD Protection |
ON Semiconductor |
187 |
DSEI20 |
Fast Recovery Epitaxial Diode (FRED) |
IXYS Corporation |
188 |
DSEI20-12A |
Fast Recovery Diodes |
IXYS |
189 |
EDI20180C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
190 |
EDI20181C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
191 |
EDI20182C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
192 |
EDI20183C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
193 |
EDI20184C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
194 |
EDI20185C |
+ 5V (+/-10%),64K x 18 monolithic high speed synchronous static RAM |
White Electronic Designs |
195 |
EDI2040C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
196 |
EDI2041C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
197 |
EDI2042C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
198 |
EDI2043C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
199 |
EDI2044C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
200 |
EDI2045C |
+ 5V (+/-10%),256K x 4 monolithic high speed synchronous static RAM |
White Electronic Designs |
201 |
EI2006X |
60V LOGIC N-Channel MOSFET |
Fairchild Semiconductor |
202 |
EPC1064LI20 |
Configuration devices for SRAM-based LUT devices, 65,536 � 1-bit device with 5.0-V operation |
Altera Corporation |
203 |
EPC1213LI20 |
Configuration devices for SRAM-based LUT devices, 212,942 � 1-bit device with 5.0-V operation |
Altera Corporation |
204 |
EPC1441LI20 |
Configuration devices for SRAM-based LUT devices, 440,800 � 1-bit device with 5.0-V or 3.3-V operation |
Altera Corporation |
205 |
EPM7256AEQI208-7 |
Programmable logic , 256 macrocells, 16 logic array blocks, 164 I/O pins, 7ns |
Altera Corporation |
206 |
EPM7256ERI208-20 |
Programmable logic , 256 macrocells, 16 logic array blocks, 164 I/O pins, 20ns |
Altera Corporation |
207 |
EPM7256SRI208-10 |
Programmable logic , 256 macrocells, 16 logic array blocks, 164 I/O pins, 10ns |
Altera Corporation |
208 |
EPM7512AEQI208-10 |
Programmable logic , 512 macrocells, 32 logic array blocks, 176 I/O pins, 10ns |
Altera Corporation |
209 |
FQI20N06 |
60V N-Channel MOSFET |
Fairchild Semiconductor |
210 |
FQI20N06L |
60V LOGIC N-Channel MOSFET |
Fairchild Semiconductor |
| | | |