| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2SD1417 |
2SD1417 |
TOSHIBA |
| 212 |
2SD1418 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 213 |
2SD1418 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 214 |
2SD1418 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 215 |
2SD1419 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 216 |
2SD1419 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 217 |
2SD1419 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 218 |
2SD2141 |
Silicon NPN Transistor |
Sanken |
| 219 |
2SJ141 |
Fast switching P-channel silicon power MOS FET. |
NEC |
| 220 |
2SJ141 |
MOS Field Effect Power Transistors |
Unknow |
| 221 |
2SK1412 |
High-Voltage High-Speed Switching Applications |
SANYO |
| 222 |
2SK1412LS |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 223 |
2SK1413 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 224 |
2SK1414 |
High-Voltage High-Speed Switching Applications |
SANYO |
| 225 |
2SK1416 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 226 |
2SK1417 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 227 |
2SK1418 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 228 |
2SK1419 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 229 |
2SK2141 |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 230 |
2SK2141(JM) |
N-channel enhancement type DMOS FET |
NEC |
| 231 |
2SK3141 |
Silicon N Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 232 |
2SK3141 |
Transistors>Switching/MOSFETs |
Renesas |
| 233 |
30141-23 |
Geode GXm Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
| 234 |
307C1410 |
Motor Start Pellet |
Vishay |
| 235 |
307C1411 |
Motor Start Pellet |
Vishay |
| 236 |
307C1414 |
Fluorescent Lighting |
Vishay |
| 237 |
307C1418 |
PTCR Overcurrent Protection |
Vishay |
| 238 |
3141 |
SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION |
Allegro MicroSystems |
| 239 |
3N141 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 240 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
| | | |
