| No. |
Part Name |
Description |
Manufacturer |
| 211 |
ADS5560IRGZT |
16-bit 40MSPS Low Power ADC with Selectable LVDS/CMOS Outputs 48-VQFN -40 to 85 |
Texas Instruments |
| 212 |
ADS5562 |
16-bit 80MSPS Low Power ADC with Selectable LVDS/CMOS Outputs 48-VQFN -40 to 85 |
Texas Instruments |
| 213 |
ADS5562IRGZR |
16-bit 80MSPS Low Power ADC with Selectable LVDS/CMOS Outputs 48-VQFN -40 to 85 |
Texas Instruments |
| 214 |
ADS5562IRGZT |
16-bit 80MSPS Low Power ADC with Selectable LVDS/CMOS Outputs 48-VQFN -40 to 85 |
Texas Instruments |
| 215 |
ADS8556 |
630kSPS, 6-Channels, Simultaneous Sampling Analog-to-Digital Converter |
Texas Instruments |
| 216 |
ADS8556IPM |
630kSPS, 6-Channels, Simultaneous Sampling Analog-to-Digital Converter 64-LQFP -40 to 125 |
Texas Instruments |
| 217 |
ADS8556IPMR |
630kSPS, 6-Channels, Simultaneous Sampling Analog-to-Digital Converter 64-LQFP -40 to 125 |
Texas Instruments |
| 218 |
AN1556 |
DESIGN-IN OF THE M29F800D 8MBIT FLASH MEMORY |
SGS Thomson Microelectronics |
| 219 |
AN556 |
THE L6353: A SMART GATE DRIVER |
SGS Thomson Microelectronics |
| 220 |
AN5560 |
V(cc): 14.4V; 695mW; 50MHz and 60MHz detection IC for TV |
Panasonic |
| 221 |
AN6556 |
Low Noise Dual Operational Amplifiers |
Panasonic |
| 222 |
AN6556S |
Low Noise Dual Operational Amplifiers |
Panasonic |
| 223 |
APT5560AN |
V(dss): 550V; 11.5A; 0.6 Ohm; N-channel enhancement mode high voltage power MOSFET |
Advanced Power Technology |
| 224 |
ASI10556 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 225 |
AT5556 |
6-CHANNEL DSC MOTOR DRIVER |
Aimtron |
| 226 |
AT5556F |
6-CHANNEL DSC MOTOR DRIVER |
Aimtron |
| 227 |
AT5556F_PBF |
6-CHANNEL DSC MOTOR DRIVER |
Aimtron |
| 228 |
AT5556N |
6-CHANNEL DSC MOTOR DRIVER |
Aimtron |
| 229 |
AT5556N_GRE |
6-CHANNEL DSC MOTOR DRIVER |
Aimtron |
| 230 |
ATTL7556AAU |
Low-Power SLICs with Battery Switch |
Agere Systems |
| 231 |
ATTL7556AAU-TR |
Low-Power SLICs with Battery Switch |
Agere Systems |
| 232 |
B556D |
Dual timer circuit, possibly equivalent LM556CN |
RFT |
| 233 |
B556D |
Dual timer circuit, possibly equivalent LM556CN |
RFT |
| 234 |
BC556 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Boca Semiconductor Corporation |
| 235 |
BC556 |
0.500W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 75 - 475 hFE |
Continental Device India Limited |
| 236 |
BC556 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 237 |
BC556 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 238 |
BC556 |
Small Signal Transistors (PNP) |
General Semiconductor |
| 239 |
BC556 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
| 240 |
BC556 |
Silicon PNP Epitaxial Planar Low Noise AF Transistor |
IPRS Baneasa |
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