No. |
Part Name |
Description |
Manufacturer |
241 |
BUK9M23-80E |
N-channel 80 V, 23 mΩ logic level MOSFET in LFPAK33 |
Nexperia |
242 |
BUZ10 |
Trans MOSFET N-CH 50V 23A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
243 |
BUZ10 |
N - CHANNEL 50V - 0.06Ohm - 23A TO-220 STripFET MOSFET |
SGS Thomson Microelectronics |
244 |
BUZ10 |
N-CHANNEL 50V - 0.06 OHM - 23A TO-220 STRIPFET POWER MOSFET |
ST Microelectronics |
245 |
BUZ10L |
Trans MOSFET N-CH 50V 23A |
New Jersey Semiconductor |
246 |
BZW06-239 |
600 W unidirectional and bidirectional transient voltage suppressor diodes, 239V |
Fagor |
247 |
BZW06-239B |
600 W unidirectional and bidirectional transient voltage suppressor diodes, 239V |
Fagor |
248 |
BZW06-23B |
Diode TVS Single Bi-Dir 23.1V 600W 2-Pin DO-15 |
New Jersey Semiconductor |
249 |
C702CB |
Phase Control SCR 1000 Amperes Avg 2300-3200 Volts |
Powerex Power Semiconductors |
250 |
C702CP |
Phase Control SCR 1000 Amperes Avg 2300-3200 Volts |
Powerex Power Semiconductors |
251 |
C702LC |
Phase Control SCR 1000 Amperes Avg 2300-3200 Volts |
Powerex Power Semiconductors |
252 |
C702LD |
Phase Control SCR 1000 Amperes Avg 2300-3200 Volts |
Powerex Power Semiconductors |
253 |
C702LM |
Phase Control SCR 1000 Amperes Avg 2300-3200 Volts |
Powerex Power Semiconductors |
254 |
C702LN |
Phase Control SCR 1000 Amperes Avg 2300-3200 Volts |
Powerex Power Semiconductors |
255 |
C782 |
Phase Control SCR 2300 Amperes Average 2500 Volts |
Powerex Power Semiconductors |
256 |
C782LB |
Phase Control SCR 2300 Amperes Average 2500 Volts |
Powerex Power Semiconductors |
257 |
C782LC |
Phase Control SCR 2300 Amperes Average 2500 Volts |
Powerex Power Semiconductors |
258 |
C782LD |
Phase Control SCR 2300 Amperes Average 2500 Volts |
Powerex Power Semiconductors |
259 |
C782LE |
Phase Control SCR 2300 Amperes Average 2500 Volts |
Powerex Power Semiconductors |
260 |
CD965Q |
0.750W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 230 - 380 hFE |
Continental Device India Limited |
261 |
CGD1042H |
1 GHz, 23 dB gain high output power doubler |
NXP Semiconductors |
262 |
CGD1042L |
1 GHz, 23 dB gain GaAs low current power doubler |
NXP Semiconductors |
263 |
CGD942C |
870 MHz, 23 dB gain power doubler amplifier |
NXP Semiconductors |
264 |
CGD982LC |
1 GHz, 23 dB gain GaAs low current power doubler |
NXP Semiconductors |
265 |
CGH21120F |
120W, 1800 - 2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX |
Wolfspeed |
266 |
CGH21240F |
240W, 1800 - 2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX |
Wolfspeed |
267 |
CGH25120F |
120W, 2300 - 2700 MHz, GaN HEMT for WiMAX and LTE |
Wolfspeed |
268 |
CGY1043 |
1 GHz, 23 dB gain GaAs push-pull amplifier |
NXP Semiconductors |
269 |
CM2P-230L |
Gastube arrester, 230V |
SEMITEC |
270 |
CM3P-230L |
Gastube arrester, 230V |
SEMITEC |
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