No. |
Part Name |
Description |
Manufacturer |
241 |
2SB66H |
Germanium Transistor PNP Alloyed Junction, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
242 |
2SB688 |
Silicon PNP triple diffused audio frequency power transistor, complementary to 2SD718 |
TOSHIBA |
243 |
2SB688 |
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
244 |
2SB73 |
Germanium Transistor PNP Alloyed Junction Audio Frequency Low Noise Amplifier |
Hitachi Semiconductor |
245 |
2SB731 |
Audio Frequency Power Amplifier,Low Speed Switching |
Unknow |
246 |
2SB736 |
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD) |
NEC |
247 |
2SB736A |
AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR(MINI MOLD) |
NEC |
248 |
2SB75 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
249 |
2SB75A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
250 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
251 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
252 |
2SB77 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
253 |
2SB77 |
GERMANIUM PNP ALLOYED JUNCTION (LOW SPEED SWITCHING AUDIO FREQUENCY POWER OUTPUT) |
Unknow |
254 |
2SB778 |
PNP PLANAR TRANSISTOR(AUDIO POWER AMPLIFIER, DC TO DC CONVERTER) |
Wing Shing Computer Components |
255 |
2SB77A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
256 |
2SB817 |
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
257 |
2SB834 |
Silicon PNP triple diffused audio frequency power transistor |
TOSHIBA |
258 |
2SB906 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS). AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
259 |
2SB994 |
Silicon PNP triple diffused audio frequency power transistor, complementary to 2SD1354 |
TOSHIBA |
260 |
2SC1000 |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
261 |
2SC1000G |
Silicon NPN epitaxial planar transistor, low noise audio amplifier applications |
TOSHIBA |
262 |
2SC1096 |
NPN silicon transistor for audio frequency and low speed switching applications |
NEC |
263 |
2SC1622 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
264 |
2SC1622A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
265 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
266 |
2SC1755 |
TV Chroma, Video,Audio Output Applications |
SANYO |
267 |
2SC1815 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
268 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
269 |
2SC1815L |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE/ LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
270 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| | | |