| Nr. |
Part Name |
Description |
Manufacturer |
| 241 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 242 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 243 |
2N6516 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 244 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 245 |
2N6517 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 246 |
2N6517BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 247 |
2N6517CBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 248 |
2N6517CTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 249 |
2N6517TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 250 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 251 |
2N6518 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 252 |
2N6518BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 253 |
2N6518TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 254 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 255 |
2N6519 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 256 |
2N6519BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 257 |
2N6519TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 258 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 259 |
2N6520 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 260 |
2N6520BU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 261 |
2N6520TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 262 |
2N6547 |
HIGH POWER NPN SILICON TRANSISTOR |
ST Microelectronics |
| 263 |
2N6547 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 264 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 265 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 266 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 267 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 268 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 269 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
| 270 |
2N6620 |
NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER |
Siemens |
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Datasheets found :: 5823 |
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