No. |
Part Name |
Description |
Manufacturer |
31 |
1N5183 |
Rectifier Diode 7500V 0.6A |
Motorola |
32 |
1N5184 |
Rectifier Diode 10000V 0.6A |
Motorola |
33 |
1N6116 |
Diode TVS Single Bi-Dir 20.6V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
34 |
1N6116A |
Diode TVS Single Bi-Dir 20.6V 500W 2-Pin |
New Jersey Semiconductor |
35 |
1N6152 |
Diode TVS Single Bi-Dir 20.6V 1.5KW 2-Pin |
New Jersey Semiconductor |
36 |
1N6152A |
Diode TVS Single Bi-Dir 20.6V 1.5KW 2-Pin |
New Jersey Semiconductor |
37 |
1N991 |
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-20% tolerance. |
Jinan Gude Electronic Device |
38 |
1N991A |
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. +-10% tolerance. |
Jinan Gude Electronic Device |
39 |
1N992 |
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-20% tolerance. |
Jinan Gude Electronic Device |
40 |
1N992A |
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. +-10% tolerance. |
Jinan Gude Electronic Device |
41 |
27C210-12A |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
42 |
27C210-12FA |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
43 |
27C210-12N |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
44 |
27C210-15A |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
45 |
27C210-15FA |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
46 |
27C210-15N |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
47 |
27C210-20A |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
48 |
27C210-20FA |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
49 |
27C210-20N |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
50 |
27C210I15A |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
51 |
27C210I15FA |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
52 |
27C210I15N |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
53 |
27C210I20A |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
54 |
27C210I20FA |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
55 |
27C210I20N |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16) |
Philips |
56 |
2N2904 |
0.600W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
57 |
2N2904 |
0.600W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
58 |
2N2904 |
Trans GP BJT PNP 40V 0.6A 3-Pin TO-39 |
New Jersey Semiconductor |
59 |
2N2904A |
0.600W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
60 |
2N2904A |
0.600W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
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