No. |
Part Name |
Description |
Manufacturer |
31 |
1N5218 |
Rectifier Diode 800V 0.75A |
Motorola |
32 |
1S100 |
General-Purpose silicon rectifier 0.75A |
TOSHIBA |
33 |
1S101 |
General-Purpose silicon rectifier 0.75A |
TOSHIBA |
34 |
1S102 |
General-Purpose silicon rectifier 0.75A |
TOSHIBA |
35 |
1S103 |
General-Purpose silicon rectifier 0.75A |
TOSHIBA |
36 |
1S104 |
General-Purpose silicon rectifier 0.75A |
TOSHIBA |
37 |
1S105 |
General-Purpose silicon rectifier 0.75A |
TOSHIBA |
38 |
1S106 |
General-Purpose silicon rectifier 0.75A |
TOSHIBA |
39 |
1S107 |
General-Purpose silicon rectifier 0.75A |
TOSHIBA |
40 |
1S108 |
General-Purpose silicon rectifier 0.75A |
TOSHIBA |
41 |
1S109 |
General-Purpose silicon rectifier 0.75A |
TOSHIBA |
42 |
2N4428 |
NPN silicon RF power transistor 0.75W - 500MHz |
Motorola |
43 |
2N5814 |
Trans GP BJT NPN 40V 0.75A 3-Pin TO-92 Box |
New Jersey Semiconductor |
44 |
2N5815 |
Trans GP BJT PNP 40V 0.75A 3-Pin TO-92 Box |
New Jersey Semiconductor |
45 |
2N5816 |
Trans GP BJT NPN 40V 0.75A 3-Pin TO-92 Box |
New Jersey Semiconductor |
46 |
2N5817 |
Trans GP BJT PNP 40V 0.75A 3-Pin TO-92 Box |
New Jersey Semiconductor |
47 |
2N5818 |
Trans GP BJT NPN 40V 0.75A 3-Pin TO-92 Box |
New Jersey Semiconductor |
48 |
2N5819 |
Trans GP BJT PNP 40V 0.75A 3-Pin TO-92 Box |
New Jersey Semiconductor |
49 |
2N5820 |
Trans GP BJT NPN 60V 0.75A 3-Pin TO-92 |
New Jersey Semiconductor |
50 |
2N5821 |
Trans GP BJT PNP 60V 0.75A 3-Pin TO-92 |
New Jersey Semiconductor |
51 |
2N5822 |
Trans GP BJT NPN 60V 0.75A 3-Pin TO-92 |
New Jersey Semiconductor |
52 |
2N5823 |
Trans GP BJT PNP 60V 0.75A 3-Pin TO-92 |
New Jersey Semiconductor |
53 |
2N6714 |
0.750W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
54 |
2N6715 |
0.750W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 1.500A Ic, 55 - hFE |
Continental Device India Limited |
55 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
56 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
57 |
3D7105-0.75 |
Delay 0.75 +/-0.4 ns, monolithic 5-TAP fixed delay line |
Data Delay Devices Inc |
58 |
3D7105-0.75 |
Delay 0.75 +/-0.4 ns, monolithic 5-TAP fixed delay line |
Data Delay Devices Inc |
59 |
3D7105G-0.75 |
Delay 0.75 +/-0.4 ns, monolithic 5-TAP fixed delay line |
Data Delay Devices Inc |
60 |
3D7105G-0.75 |
Delay 0.75 +/-0.4 ns, monolithic 5-TAP fixed delay line |
Data Delay Devices Inc |
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