| No. |
Part Name |
Description |
Manufacturer |
| 31 |
1N5239BTR |
9.1V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 32 |
1N5239BUR |
Zener Voltage Regulator Diode |
Microsemi |
| 33 |
1N5239BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 9.1 V. Tolerance +-5%. |
Microsemi |
| 34 |
1N5239BUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 35 |
1N5239B_T50A |
9.1V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 36 |
1N5239B_T50R |
9.1V, 0.5W Zener Diode |
Fairchild Semiconductor |
| 37 |
ACZRM5239B-HF |
Halogen Free Zener Diodes, PD=0.5Watts, VZ=9.1V |
Comchip Technology |
| 38 |
ACZRW5239B-G |
Zener Diodes, PD=0.35Watts, VZ=9.1V |
Comchip Technology |
| 39 |
BC239B |
0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 200 - 460 hFE |
Continental Device India Limited |
| 40 |
BC239B |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 41 |
BC239B |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 42 |
BC239B |
NPN silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 43 |
BC239B |
NPN Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
| 44 |
BC239BBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 45 |
BC239BP |
Low Noise NPN Transistor |
FERRANTI |
| 46 |
BC239BP |
General purpose NPN transistor |
FERRANTI |
| 47 |
BC239BTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 48 |
BD239B |
30.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 40 hFE. |
Continental Device India Limited |
| 49 |
BD239B |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 50 |
BD239B |
PNP power transistor |
FERRANTI |
| 51 |
BD239B |
Pro electron power transistor |
General Electric Solid State |
| 52 |
BD239B |
2A Complementary silicon plastic 30W power NPN transistor 80V |
Motorola |
| 53 |
BD239B |
Trans GP BJT NPN 90V 2A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
| 54 |
BD239B |
NPN SILICON POWER TRANSISTORS |
Power Innovations |
| 55 |
BD239B |
Silicon NPN Power Transistors TO-220C package |
Savantic |
| 56 |
BD239BTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 57 |
BZW04-239B |
280 V, 1 mA, 400 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 58 |
BZW04-239B |
Glass Passivated Junction Transient Voltage Suppressor |
General Semiconductor |
| 59 |
BZW04-239B |
Discrete Devices -Diode-TVS |
Taiwan Semiconductor |
| 60 |
BZW04P239B |
Glass Passivated Junction Transient Voltage Suppressor |
General Semiconductor |
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