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Datasheets for 4 BITS

Datasheets found :: 54
Page: | 1 | 2 |
No. Part Name Description Manufacturer
31 SAB8316 Static MOS read-only memory (ROM) capacity 16384 bits Siemens
32 SR176-A3S/1GE 13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID ST Microelectronics
33 SR176-A3T/1GE 13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID ST Microelectronics
34 SR176-A4S/1GE 13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID ST Microelectronics
35 SR176-A4T/1GE 13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID ST Microelectronics
36 SR176-A5S/1GE 13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID ST Microelectronics
37 SR176-A5T/1GE 13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID ST Microelectronics
38 SR176-SBN18/1GE 13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID ST Microelectronics
39 SR176-W4/1GE 13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID ST Microelectronics
40 TC55465AJ-15 15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
41 TC55465AJ-20 20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
42 TC55465AJ-25 25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
43 TC55465AJ-35 35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
44 TC55465AP-20 20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
45 TC55465AP-25 25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
46 TC55465AP-35 35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM TOSHIBA
47 TMM2018AP 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply TOSHIBA
48 TMM2018AP-25 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply TOSHIBA
49 TMM2018AP-35 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply TOSHIBA
50 TMM2018AP-45 16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply TOSHIBA
51 TMP87P809M ROM: 4K x 4 bits; RAM: 256 x 8 bits; V(dd): -0.3 to 6.5V; V(in): -0.3 to +0.3V; CMOS 8-bit microcontroller TOSHIBA
52 TMP87P809N ROM: 4K x 4 bits; RAM: 256 x 8 bits; V(dd): -0.3 to 6.5V; V(in): -0.3 to +0.3V; CMOS 8-bit microcontroller TOSHIBA
53 TXXS Single-In-Line, Coated, 4 Bits to 8 Bits, R/2R Ladder Network for D/A and A/D Converters with BI-Polar or CMOS Switches Vishay
54 ZN54170 16-bit read-write memory with words of 4 bits each FERRANTI


Datasheets found :: 54
Page: | 1 | 2 |



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