No. |
Part Name |
Description |
Manufacturer |
31 |
SAB8316 |
Static MOS read-only memory (ROM) capacity 16384 bits |
Siemens |
32 |
SR176-A3S/1GE |
13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID |
ST Microelectronics |
33 |
SR176-A3T/1GE |
13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID |
ST Microelectronics |
34 |
SR176-A4S/1GE |
13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID |
ST Microelectronics |
35 |
SR176-A4T/1GE |
13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID |
ST Microelectronics |
36 |
SR176-A5S/1GE |
13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID |
ST Microelectronics |
37 |
SR176-A5T/1GE |
13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID |
ST Microelectronics |
38 |
SR176-SBN18/1GE |
13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID |
ST Microelectronics |
39 |
SR176-W4/1GE |
13.56MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64 bits Unique ID |
ST Microelectronics |
40 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
41 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
42 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
43 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
44 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
45 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
46 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
47 |
TMM2018AP |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
48 |
TMM2018AP-25 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
49 |
TMM2018AP-35 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
50 |
TMM2018AP-45 |
16,384 bits high speed and low power static random access memory organized as 2,048 words by 8 bits and operates from a single 5V supply |
TOSHIBA |
51 |
TMP87P809M |
ROM: 4K x 4 bits; RAM: 256 x 8 bits; V(dd): -0.3 to 6.5V; V(in): -0.3 to +0.3V; CMOS 8-bit microcontroller |
TOSHIBA |
52 |
TMP87P809N |
ROM: 4K x 4 bits; RAM: 256 x 8 bits; V(dd): -0.3 to 6.5V; V(in): -0.3 to +0.3V; CMOS 8-bit microcontroller |
TOSHIBA |
53 |
TXXS |
Single-In-Line, Coated, 4 Bits to 8 Bits, R/2R Ladder Network for D/A and A/D Converters with BI-Polar or CMOS Switches |
Vishay |
54 |
ZN54170 |
16-bit read-write memory with words of 4 bits each |
FERRANTI |
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