No. |
Part Name |
Description |
Manufacturer |
31 |
5962P9960601QUA |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
32 |
5962P9960601QUC |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
33 |
5962P9960601QUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
34 |
5962P9960601TUA |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
35 |
5962P9960601TUC |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
36 |
5962P9960601TUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Mil temp. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
37 |
DSS60601MZ4 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
38 |
DSS60601MZ4-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V |
Diodes |
39 |
NSS60601MZ4 |
Low VCE(sat) Transistor, NPN, 60 V, 6.0 A |
ON Semiconductor |
| | | |