No. |
Part Name |
Description |
Manufacturer |
31 |
2N6552 |
Trans GP BJT NPN 80V 1A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
32 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
33 |
2N6553 |
Trans GP BJT NPN 100V 1A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
34 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
35 |
2N6554 |
Trans GP BJT PNP 60V 1A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
36 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
37 |
2N6555 |
Trans GP BJT PNP 80V 1A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
38 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
Central Semiconductor |
39 |
2N6556 |
Trans GP BJT PNP 100V 1A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
40 |
2N6557 |
Trans GP BJT NPN 250V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
41 |
2N6558 |
Trans GP BJT NPN 300V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
42 |
2N6559 |
Trans GP BJT NPN 350V 0.5A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
43 |
2N6655 |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
44 |
2N6655 |
Bipolar NPN Device |
SemeLAB |
45 |
2N6655/1 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
46 |
2N6655/2 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
47 |
2N6655/3 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
48 |
2N6655/4 |
Silicon NPN High Power High Voltage Switching Transistor |
IPRS Baneasa |
49 |
2N6655A |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
50 |
2N6655B |
Silicon NPN, High Power, High Voltage Switching Transistor |
IPRS Baneasa |
51 |
2SB1655 |
Power Transistor (-60V/ -3A) |
ROHM |
52 |
2SB1655 |
Silicon PNP Power Transistors TO-220F package |
Savantic |
53 |
2SB655 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
54 |
2SC2655 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
55 |
2SC2655-O |
TO-92MOD Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
56 |
2SC2655-Y |
TO-92MOD Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
57 |
2SC2655L-O |
TO-92L Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
58 |
2SC2655L-Y |
TO-92L Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
59 |
2SC4655 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
60 |
2SC4655G |
Silicon NPN epitaxial planar type |
Panasonic |
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