| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IRF614 |
2.0A/ 250V/ 2.0 Ohm/ N-Channel Power MOSFET |
Intersil |
| 32 |
IRF614B |
250V N-Channel MOSFET |
Fairchild Semiconductor |
| 33 |
IRF614B_FP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A |
Fairchild Semiconductor |
| 34 |
IRF614B_FP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A |
Fairchild Semiconductor |
| 35 |
IRF614B_FP001 |
250V N-Channel B-FET / Substitute of IRF614 & IRF614A |
Fairchild Semiconductor |
| 36 |
IRF614PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 37 |
IRF614S |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 38 |
NX8562LF614-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1561.41 nm. Frequency 192.00 THz. Anode floating. FC-PC connector. |
NEC |
| 39 |
NX8563LF614-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1561.41 nm. Frequency 192.00 THz. FC-PC connector. Anode floating. |
NEC |
| 40 |
REF6141 |
High-Precision Voltage Reference With Integrated High-Bandwidth Buffer 8-VSSOP -40 to 125 |
Texas Instruments |
| 41 |
REF6141IDGKR |
High-Precision Voltage Reference With Integrated High-Bandwidth Buffer 8-VSSOP -40 to 125 |
Texas Instruments |
| 42 |
REF6141IDGKT |
High-Precision Voltage Reference With Integrated High-Bandwidth Buffer 8-VSSOP -40 to 125 |
Texas Instruments |
| 43 |
REF6145 |
High-Precision Voltage Reference With Integrated High-Bandwidth Buffer 8-VSSOP -40 to 125 |
Texas Instruments |
| 44 |
REF6145IDGKR |
High-Precision Voltage Reference With Integrated High-Bandwidth Buffer 8-VSSOP -40 to 125 |
Texas Instruments |
| 45 |
REF6145IDGKT |
High-Precision Voltage Reference With Integrated High-Bandwidth Buffer 8-VSSOP -40 to 125 |
Texas Instruments |
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