| No. |
Part Name |
Description |
Manufacturer |
| 31 |
CFD1275P |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949P |
Continental Device India Limited |
| 32 |
CFD1275Q |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q |
Continental Device India Limited |
| 33 |
CFD1275R |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R |
Continental Device India Limited |
| 34 |
IRFD120 |
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package |
International Rectifier |
| 35 |
IRFD120 |
1.3A/ 100V/ 0.300 Ohm/ N-Channel Power MOSFET |
Intersil |
| 36 |
RFD12N06RLE |
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
| 37 |
RFD12N06RLE |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
| 38 |
RFD12N06RLESM |
60V N-Channel Logic Level UltraFET PowerMOSFET |
Fairchild Semiconductor |
| 39 |
RFD12N06RLESM |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
| 40 |
RFD12N06RLESM9A |
60V N-Channel Logic Level UltraFET PowerMOSFET |
Fairchild Semiconductor |
| 41 |
SFD121 |
Germanium Diode |
COSEM |
| 42 |
SFD121 |
Gold bounded germanium signal diode - switching |
SESCOSEM |
| 43 |
SFD122 |
Germanium Diode |
COSEM |
| 44 |
SFD122 |
Gold bounded germanium signal diode - switching |
SESCOSEM |
| 45 |
SFD127 |
Germanium Diode |
COSEM |
| 46 |
SFD129 |
Germanium Diode |
COSEM |
| 47 |
SFD129B |
Gold bounded germanium signal diode - high current switching |
SESCOSEM |
| 48 |
TMS320C6211FD120 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
| 49 |
TMS320C6711FD120 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
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