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Datasheets for IRF2

Datasheets found :: 190
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 IRF221 N-Channel Power MOSFETs/ 7A/ 150-200V Fairchild Semiconductor
32 IRF221 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
33 IRF221 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs Intersil
34 IRF221 Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
35 IRF221 N-CHANNEL POWER MOSFETS Samsung Electronic
36 IRF222 N-Channel Power MOSFETs/ 7A/ 150-200V Fairchild Semiconductor
37 IRF222 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
38 IRF222 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs Intersil
39 IRF222 Trans MOSFET N-CH 200V 4A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
40 IRF222 N-CHANNEL POWER MOSFETS Samsung Electronic
41 IRF223 N-Channel Power MOSFETs/ 7A/ 150-200V Fairchild Semiconductor
42 IRF223 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
43 IRF223 4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs Intersil
44 IRF223 Trans MOSFET N-CH 150V 4A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
45 IRF223 N-CHANNEL POWER MOSFETS Samsung Electronic
46 IRF224 (IRF225) HEXFET Transistors International Rectifier
47 IRF224 (IRF225) HEXFET Transistors International Rectifier
48 IRF230 N-Channel Power MOSFETs/ 12A/ 150-200 V Fairchild Semiconductor
49 IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
50 IRF230 200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package International Rectifier
51 IRF230 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Intersil
52 IRF230 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
53 IRF230 N-CHANNEL POWER MOSFETS Samsung Electronic
54 IRF230 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET SemeLAB
55 IRF230-233 N-Channel Power MOSFETs/ 12A/ 150-200 V Fairchild Semiconductor
56 IRF230N Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
57 IRF231 N-Channel Power MOSFETs/ 12A/ 150-200 V Fairchild Semiconductor
58 IRF231 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
59 IRF231 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Intersil
60 IRF231 Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor


Datasheets found :: 190
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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