| No. |
Part Name |
Description |
Manufacturer |
| 31 |
IRF321 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 32 |
IRF322 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 33 |
IRF322 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 34 |
IRF322 |
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 35 |
IRF322 |
Trans MOSFET N-CH 400V 2.8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 36 |
IRF322 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 37 |
IRF323 |
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V |
Fairchild Semiconductor |
| 38 |
IRF323 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
| 39 |
IRF323 |
2.8A and 3.3A/ 350V and 400V/ 1.8 and 2.5 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 40 |
IRF323 |
Trans MOSFET N-CH 350V 2.8A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 41 |
IRF323 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 42 |
PB-IRF3205L |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 43 |
PB-IRF3205S |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 44 |
PB-IRF3205Z |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
| 45 |
PB-IRF3205ZL |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package |
International Rectifier |
| 46 |
PB-IRF3205ZS |
Leaded 55V Single N-Channel HEXFET Power MOSFET in a D2Pak Package |
International Rectifier |
| | | |
