No. |
Part Name |
Description |
Manufacturer |
31 |
IRF820 |
N - CHANNEL 500V - 2.5 W - 2.5 A - TO-220 PowerMESH MOSFET |
SGS Thomson Microelectronics |
32 |
IRF820 |
N-CHANNEL 500V - 2.5 OHM - 4A - TO-220 POWERMESH II MOSFET |
ST Microelectronics |
33 |
IRF820A |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
34 |
IRF820AL |
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
35 |
IRF820APBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
36 |
IRF820AS |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
37 |
IRF820ASTRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
38 |
IRF820ASTRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
39 |
IRF820B |
500V N-Channel MOSFET |
Fairchild Semiconductor |
40 |
IRF820FI |
N-channel enhancement mode power MOS transistor, 500V, 2.2A |
SGS Thomson Microelectronics |
41 |
IRF820PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
42 |
IRF820S |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
43 |
IRF820STRL |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
44 |
IRF820STRR |
500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
45 |
IRF821 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
46 |
IRF821 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
47 |
IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
48 |
IRF821 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
49 |
IRF821 |
N-channel MOSFET, 450V, 2.5A |
SGS Thomson Microelectronics |
50 |
IRF821FI |
N-channel MOSFET, 450V, 2.0A |
SGS Thomson Microelectronics |
51 |
IRF822 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
52 |
IRF822 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
53 |
IRF822 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
54 |
IRF822 |
N-channel enhancement mode power MOS transistor, 500V, 2.8A |
SGS Thomson Microelectronics |
55 |
IRF822FI |
N-channel enhancement mode power MOS transistor, 500V, 1.9A |
SGS Thomson Microelectronics |
56 |
IRF822FI |
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS |
ST Microelectronics |
57 |
IRF823 |
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V |
Fairchild Semiconductor |
58 |
IRF823 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. |
General Electric Solid State |
59 |
IRF823 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS |
Motorola |
60 |
IRF823 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
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