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Datasheets for LOW NOISE AMPLIFIER

Datasheets found :: 1056
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 2N5462 P-Channel JFET Low Noise Amplifier Intersil
32 2N5463 P-Channel JFET Low Noise Amplifier Intersil
33 2N5464 P-Channel JFET Low Noise Amplifier Intersil
34 2N5465 P-Channel JFET Low Noise Amplifier Intersil
35 2N5515 DUAL N CHANNEL JFET LOW NOISE AMPLIFIER Intersil
36 2N5516 DUAL N CHANNEL JFET LOW NOISE AMPLIFIER Intersil
37 2N5517 DUAL N CHANNEL JFET LOW NOISE AMPLIFIER Intersil
38 2N5518 DUAL N CHANNEL JFET LOW NOISE AMPLIFIER Intersil
39 2N5519 DUAL N CHANNEL JFET LOW NOISE AMPLIFIER Intersil
40 2N5520 DUAL N CHANNEL JFET LOW NOISE AMPLIFIER Intersil
41 2N5521 DUAL N CHANNEL JFET LOW NOISE AMPLIFIER Intersil
42 2N5522 DUAL N CHANNEL JFET LOW NOISE AMPLIFIER Intersil
43 2N5523 DUAL N CHANNEL JFET LOW NOISE AMPLIFIER Intersil
44 2N5524 DUAL N CHANNEL JFET LOW NOISE AMPLIFIER Intersil
45 2N6483 Dual N-Channel JFET Low Noise Amplifier Intersil
46 2N6484 Dual N-Channel JFET Low Noise Amplifier Intersil
47 2N6485 Dual N-Channel JFET Low Noise Amplifier Intersil
48 2N929 NPN silicon annular transistors for low-level, low noise amplifier applications Motorola
49 2N929A NPN silicon annular transistors for low-level, low noise amplifier applications Motorola
50 2N930 NPN silicon annular transistors for low-level, low noise amplifier applications Motorola
51 2N930A NPN silicon annular transistors for low-level, low noise amplifier applications Motorola
52 2SA1015(L) Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications TOSHIBA
53 2SA1245 Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications TOSHIBA
54 2SA1312 Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications TOSHIBA
55 2SA9015 LOW FREQUENCY LOW NOISE AMPLIFIER USHA India LTD
56 2SA992 Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. USHA India LTD
57 2SB439 Germanium PNP alloy junction transistor, low noise amplifier applications TOSHIBA
58 2SB440 Germanium PNP alloy junction transistor, low noise amplifier applications TOSHIBA
59 2SB73 Germanium Transistor PNP Alloyed Junction Audio Frequency Low Noise Amplifier Hitachi Semiconductor
60 2SC1222 Transistors LOW FREQUENCY LOW NOISE AMPLIFIER USHA India LTD


Datasheets found :: 1056
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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