| No. |
Part Name |
Description |
Manufacturer |
| 31 |
PHP21N06T |
TrenchMOSO transistor Standard level FET |
Philips |
| 32 |
SPP21N10 |
N-Channel SIPMOS Power Transistor |
Infineon |
| 33 |
SPP21N10 |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=85mOhm, 21A, NL |
Infineon |
| 34 |
SPP21N50C3 |
for lowest Conduction Losses & fastest Switching |
Infineon |
| 35 |
STP21N05L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 36 |
STP21N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 37 |
STP21N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 38 |
STP21N05LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 39 |
STP21N05LFI |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 40 |
STP21N05LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 41 |
STP21N06L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 42 |
STP21N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 43 |
STP21N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 44 |
STP21N06LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 45 |
STP21N06LFI |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 46 |
STP21N06LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 47 |
STP21N65M5 |
N-channel 650 V, 0.150 Ohm, 17 A MDmesh(TM) V Power MOSFET in TO-220 |
ST Microelectronics |
| 48 |
STP21N90K5 |
N-channel 900 V, 0.25 Ohm, 18.5 A TO-220 Zener-protected SuperMESH(TM) 5 Power MOSFET |
ST Microelectronics |
| 49 |
STP21NM60ND |
N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220 package |
ST Microelectronics |
| | | |
