No. |
Part Name |
Description |
Manufacturer |
331 |
2307 |
7 W, 20 V, 2300 MHz common base transistor |
GHz Technology |
332 |
2324-12L |
12 W, 20 V, 2300-2400 MHz common base transistor |
GHz Technology |
333 |
2324-20 |
20 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
334 |
2324-5 |
5 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
335 |
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
336 |
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
337 |
23A008 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
338 |
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
339 |
23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
340 |
2425-25 |
25 W, 24 V, 2410-2470 MHz common base transistor |
GHz Technology |
341 |
2425GN-150CW |
GaN Transistors |
Microsemi |
342 |
24N60C3 |
CoolMOS Power Transistor |
Infineon |
343 |
25A1400-Z |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 |
NEC |
344 |
2729GN-150 |
GaN Transistors |
Microsemi |
345 |
2729GN-270 |
GaN Transistors |
Microsemi |
346 |
2729GN-400 |
GaN Transistors |
Microsemi |
347 |
2729GN-500 |
GaN Transistors |
Microsemi |
348 |
2730GN-100L |
GaN Transistors |
Microsemi |
349 |
2731GN-110M |
GaN Transistors |
Microsemi |
350 |
2731GN-200M |
GaN Transistors |
Microsemi |
351 |
2AS1832F |
TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
TOSHIBA |
352 |
2DA1201Y |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
353 |
2DA1201Y-7 |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
354 |
2DA1201YQTC |
120V PNP SILICON TRANSISTOR IN SOT89 |
Diodes |
355 |
2DA1213O |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
356 |
2DA1213O |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
357 |
2DA1213O |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
358 |
2DA1213O-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
359 |
2DA1213O-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
360 |
2DA1213O-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
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