No. |
Part Name |
Description |
Manufacturer |
61 |
2N2904A |
Trans GP BJT PNP 60V 0.6A 3-Pin TO-39 |
New Jersey Semiconductor |
62 |
2N2905 |
0.600W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
63 |
2N2905 |
0.600W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
64 |
2N2905 |
Trans GP BJT PNP 40V 0.6A 3-Pin TO-39 |
New Jersey Semiconductor |
65 |
2N2905A |
0.600W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 50 hFE. |
Continental Device India Limited |
66 |
2N2905A |
0.600W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 50 hFE. |
Continental Device India Limited |
67 |
2N2905A |
Trans GP BJT PNP 60V 0.6A 3-Pin TO-39 Box |
New Jersey Semiconductor |
68 |
2N2905AL |
Trans GP BJT PNP 60V 0.6A 3-Pin TO-5 |
New Jersey Semiconductor |
69 |
2N2905AS |
Trans GP BJT PNP 60V 0.6A 3-Pin TO-39 Box |
New Jersey Semiconductor |
70 |
2N2906 |
0.400W Switching PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
71 |
2N2906 |
Trans GP BJT PNP 40V 0.6A 3-Pin TO-18 |
New Jersey Semiconductor |
72 |
2N2906A |
0.400W Switching PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
73 |
2N2906A |
Trans GP BJT PNP 60V 0.6A 3-Pin TO-18 |
New Jersey Semiconductor |
74 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
75 |
2N2907 |
0.400W Switching PNP Metal Can Transistor. 40V Vceo, 0.600A Ic, 30 hFE. |
Continental Device India Limited |
76 |
2N2907 |
Trans GP BJT PNP 40V 0.6A 3-Pin TO-18 |
New Jersey Semiconductor |
77 |
2N2907A |
0.400W Switching PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 50 hFE. |
Continental Device India Limited |
78 |
2N2907A |
Trans GP BJT PNP 60V 0.6A 3-Pin TO-18 |
New Jersey Semiconductor |
79 |
2N2907A |
60 V, 0.6 A, PNP silicon planar transistor |
Siemens |
80 |
2N2907AHR |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
81 |
2N2907AHRG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
82 |
2N2907AHRT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
83 |
2N2907ARHRG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
84 |
2N2907ARHRT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
85 |
2N2907ARUBG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
86 |
2N2907ARUBT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
87 |
2N2907AUB1 |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
88 |
2N2907AUBG |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
89 |
2N2907AUBT |
Hi-Rel PNP bipolar transistor 60 V, 0.6 A |
ST Microelectronics |
90 |
2N3482 |
Trans GP BJT PNP 60V 0.6A 3-Pin TO-46 |
New Jersey Semiconductor |
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