| No. |
Part Name |
Description |
Manufacturer |
| 61 |
MC10H102FNR2 |
Quad 2-Input NOR Gate |
ON Semiconductor |
| 62 |
MC10H102FNR2 |
Quad 2-Input NOR Gate |
ON Semiconductor |
| 63 |
MC10H102FNR2 |
Quad 2-Input NOR Gate |
ON Semiconductor |
| 64 |
MC10H102FNR2 |
Quad 2-Input NOR Gate |
ON Semiconductor |
| 65 |
MC10H102FNR2 |
Quad 2-Input NOR Gate |
ON Semiconductor |
| 66 |
MC10H102FNR2 |
Quad 2-Input NOR Gate |
ON Semiconductor |
| 67 |
MC10H102FNR2 |
Quad 2-Input NOR Gate |
ON Semiconductor |
| 68 |
MC3102F |
QUAD 2-INPUT NOR GATE |
Motorola |
| 69 |
MM3102F |
Low-ripple, low-saturation CMOS regulators, 2.5V |
Mitsumi Electric |
| 70 |
MN102F1617 |
Microcomputers/Controllers |
Panasonic |
| 71 |
NJG1102F1 |
LOW NOISE AMPLIFIER GaAs MMIC |
New Japan Radio |
| 72 |
NJW1102FG1 |
DOLBY PRO LOGIC SURROUND DECODER |
New Japan Radio |
| 73 |
P89LPC9102FTK |
8-bit microcontrollers with accelerated two-clock 80C51 core 1 kB 3 V byte-erasable Flash with 8-bit A/D converter |
Philips |
| 74 |
P89LPC9102FTK |
P89LPC9102/9103/9107; 8-bit microcontrollers with accelerated two-clock 80C51 core 1 kB 3 V byte-erasable Flash with 8-bit A/D converter |
Philips |
| 75 |
PA102FM |
P-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) |
NIKO-SEM |
| 76 |
PN102F |
Opto-Electronic Device - Photo Detectors - Phototransistors |
Panasonic |
| 77 |
PNZ102F |
Silicon NPN Phototransistors |
Panasonic |
| 78 |
RL102F |
1.0 AMP FAST RECOVERY RECTIFIERS |
Bytes |
| 79 |
RL102F |
TECHNICAL SPECIFICATIONS OF FAST RECOVERY RECTIFIER |
DC Components |
| 80 |
RL102F |
FAST SWITCHING PLASITC RECTIFIER |
GOOD-ARK Electronics |
| 81 |
RL102F |
FAST RECOVERY RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
| 82 |
RL102FG |
1.0A fast recovery glass passivated rectifier |
DC Components |
| 83 |
RL102FG |
GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER |
GOOD-ARK Electronics |
| 84 |
RN1102F |
Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 85 |
RN1102FT |
Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 86 |
RN2102F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
TOSHIBA |
| 87 |
RN2102FT |
Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. |
TOSHIBA |
| 88 |
SA9102F |
SINGLE PHASE BIDIRECTIONAL POWER/ENERGY METERING IC WITH INSTANTANEOUS PULSE OUTPUT |
Sames |
| 89 |
SA9102FPA |
Single phase bidirectional power/energy metering IC instaneous pulse output |
Sames |
| 90 |
SA9102FSA |
Single phase bidirectional power/energy metering IC instaneous pulse output |
Sames |
| | | |
