No. |
Part Name |
Description |
Manufacturer |
61 |
1N6144 |
Diode TVS Single Bi-Dir 9.1V 1.5KW 2-Pin |
New Jersey Semiconductor |
62 |
1N6144 |
1500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS |
Semtech |
63 |
1N6144A |
Transient Voltage Suppressor |
Microsemi |
64 |
1N6144A |
Diode TVS Single Bi-Dir 9.1V 1.5KW 2-Pin |
New Jersey Semiconductor |
65 |
1N6144A |
QPL 1500 Watt Axial Leaded TVS |
Semtech |
66 |
1N6144Ae3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
67 |
1N6144AUS |
Transient Voltage Suppressor |
Microsemi |
68 |
1N6144AUSe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
69 |
1N6144e3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
70 |
1N6144US |
Transient Voltage Suppressor |
Microsemi |
71 |
1N6144USe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
72 |
1S144 |
Meter-protection Diode |
TOSHIBA |
73 |
1S144 |
Silicon Alloy junction meter protection diode |
TOSHIBA |
74 |
20KP144 |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
75 |
20KP144A |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
76 |
20KP144C |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
77 |
20KP144CA |
TRANSIENT SUPPRESSOR WITH 20 |
New Jersey Semiconductor |
78 |
20KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
79 |
20KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
80 |
20KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
81 |
20KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
82 |
21-0144B |
PACKAGEOUTLINE |
MAXIM - Dallas Semiconductor |
83 |
27C256 |
262,144-Bit (32,768 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
84 |
27C256E250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
85 |
27C256E300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
86 |
27C256E350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
87 |
27C256Q250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
88 |
27C256Q300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
89 |
27C256Q350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
90 |
2N1144 |
Germanium PNP Transistor |
Motorola |
| | | |