| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N6171A |
Diode TVS Single Bi-Dir 121.6V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 62 |
1N6171A |
QPL 1500 Watt Axial Leaded TVS |
Semtech |
| 63 |
1N6171Ae3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 64 |
1N6171AUS |
Transient Voltage Suppressor |
Microsemi |
| 65 |
1N6171AUSe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 66 |
1N6171e3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 67 |
1N6171US |
Transient Voltage Suppressor |
Microsemi |
| 68 |
1N6171USe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 69 |
1N6303A |
Diode TVS Single Uni-Dir 171V 1.5KW 2-Pin DO-201 Reel |
New Jersey Semiconductor |
| 70 |
1V115 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 171 V @ 1mA DC test current. |
NTE Electronics |
| 71 |
2082-6171-03 |
2 Watt, DC-4 GHz, Fixed coaxial attenuator |
MA-Com |
| 72 |
2082-6171-03 |
Fixed Coaxial Attenuators |
Tyco Electronics |
| 73 |
2171 |
T-1 Subminiature Lamps |
Gilway Technical Lamp |
| 74 |
2DB1713 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors |
Diodes |
| 75 |
2DB1713-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors |
Diodes |
| 76 |
2DB1714 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 77 |
2DB1714-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V |
Diodes |
| 78 |
2N1171 |
Germanium PNP Transistor |
Motorola |
| 79 |
2N1710 |
Silicon NPN Transistor |
Motorola |
| 80 |
2N1711 |
Silicon NPN planar switching transistor with high current gain |
AEG-TELEFUNKEN |
| 81 |
2N1711 |
GENERAL PURPOSE TRANSISTOR NPN SILICON |
Boca Semiconductor Corporation |
| 82 |
2N1711 |
GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 83 |
2N1711 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 84 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 85 |
2N1711 |
General purpose NPN transistor |
FERRANTI |
| 86 |
2N1711 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
| 87 |
2N1711 |
Silicon NPN epitaxial planar transistor |
IPRS Baneasa |
| 88 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 89 |
2N1711 |
Silicon NPN Planar Transistor (in german) |
ITT Semiconductors |
| 90 |
2N1711 |
High frequency transistor |
mble |
| | | |
