No. |
Part Name |
Description |
Manufacturer |
61 |
2N1893S |
Chip: 7.0V; geometry 4500; polarity NPN |
Semicoa Semiconductor |
62 |
2N1893UB |
Chip Type 2C1893 Geometry 4500 Polarity NPN |
Semicoa Semiconductor |
63 |
2N2450 |
Germanium PNP Transistor |
Motorola |
64 |
2N3019 |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
65 |
2N3019S |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
66 |
2N3019UB |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
67 |
2N3057 |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
68 |
2N3057A |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
69 |
2N3450 |
Silicon NPN Transistor |
Motorola |
70 |
2N3700 |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
71 |
2N3700UB |
Chip Type 2C3019 Geometry 4500 Polarity PNP |
Semicoa Semiconductor |
72 |
2N4450 |
Silicon NPN Transistor |
Motorola |
73 |
2N450 |
Germanium PNP Transistor |
Motorola |
74 |
2N5031 |
NPN silicon high frequency transistor 2.5dB - 450MHz |
Motorola |
75 |
2N5032 |
NPN silicon high frequency transistor 3.0dB - 450MHz |
Motorola |
76 |
2N5450 |
Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits |
AEG-TELEFUNKEN |
77 |
2N5450 |
NPN silicon amplifier transistor |
ITT Semiconductors |
78 |
2N5450 |
SILICON GENERAL PURPOSE AF TRANSISTORS |
Micro Electronics |
79 |
2N5450 |
Silicon NPN Transistor |
Motorola |
80 |
2N6251 |
450V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
81 |
2N6397 |
12A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
82 |
2N6403 |
16A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
83 |
2N6450 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
84 |
2N6450 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
85 |
2N6581 |
Trans GP BJT NPN 450V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
86 |
2N6752 |
Trans GP BJT NPN 450V 10A |
New Jersey Semiconductor |
87 |
2N6761 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
88 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
89 |
2N6762 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
90 |
2N6769 |
N-Channel Power MOSFETs/ 12A/ 450V/500V |
Fairchild Semiconductor |
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