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Datasheets for 450

Datasheets found :: 4529
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 2N1893S Chip: 7.0V; geometry 4500; polarity NPN Semicoa Semiconductor
62 2N1893UB Chip Type 2C1893 Geometry 4500 Polarity NPN Semicoa Semiconductor
63 2N2450 Germanium PNP Transistor Motorola
64 2N3019 Chip Type 2C3019 Geometry 4500 Polarity PNP Semicoa Semiconductor
65 2N3019S Chip Type 2C3019 Geometry 4500 Polarity PNP Semicoa Semiconductor
66 2N3019UB Chip Type 2C3019 Geometry 4500 Polarity PNP Semicoa Semiconductor
67 2N3057 Chip Type 2C3019 Geometry 4500 Polarity PNP Semicoa Semiconductor
68 2N3057A Chip Type 2C3019 Geometry 4500 Polarity PNP Semicoa Semiconductor
69 2N3450 Silicon NPN Transistor Motorola
70 2N3700 Chip Type 2C3019 Geometry 4500 Polarity PNP Semicoa Semiconductor
71 2N3700UB Chip Type 2C3019 Geometry 4500 Polarity PNP Semicoa Semiconductor
72 2N4450 Silicon NPN Transistor Motorola
73 2N450 Germanium PNP Transistor Motorola
74 2N5031 NPN silicon high frequency transistor 2.5dB - 450MHz Motorola
75 2N5032 NPN silicon high frequency transistor 3.0dB - 450MHz Motorola
76 2N5450 Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits AEG-TELEFUNKEN
77 2N5450 NPN silicon amplifier transistor ITT Semiconductors
78 2N5450 SILICON GENERAL PURPOSE AF TRANSISTORS Micro Electronics
79 2N5450 Silicon NPN Transistor Motorola
80 2N6251 450V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
81 2N6397 12A silicon controlled rectifier. Vrsom 450V. General Electric Solid State
82 2N6403 16A silicon controlled rectifier. Vrsom 450V. General Electric Solid State
83 2N6450 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
84 2N6450 N-CHANNEL SILICON JUNCTION FET New Jersey Semiconductor
85 2N6581 Trans GP BJT NPN 450V 10A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
86 2N6752 Trans GP BJT NPN 450V 10A New Jersey Semiconductor
87 2N6761 N-Channel Power MOSFETs/ 4.5A/ 450V/500V Fairchild Semiconductor
88 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
89 2N6762 N-Channel Power MOSFETs/ 4.5A/ 450V/500V Fairchild Semiconductor
90 2N6769 N-Channel Power MOSFETs/ 12A/ 450V/500V Fairchild Semiconductor


Datasheets found :: 4529
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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