| No. |
Part Name |
Description |
Manufacturer |
| 61 |
RSD150N06FRATL |
4V Drive Nch MOSFET (Corresponds to AEC-Q101) |
ROHM |
| 62 |
RSD150N06TL |
4V Drive Nch MOSFET |
ROHM |
| 63 |
SMP50N06-25 |
N-Channel Enhancement-Mode MOSFET |
Vishay |
| 64 |
SPD50N06S2-14 |
Low Voltage MOSFETs - DPAK; 50 A; 55V; NL; 14.4 mOhm |
Infineon |
| 65 |
SPD50N06S2L-13 |
Low Voltage MOSFETs - DPAK; 50 A; 55V; LL; 12.7 mOhm |
Infineon |
| 66 |
STE250N06 |
Length/Height 12.2 mm Width 25.4 mm Depth 38 mm Power dissipation 450 W Transistor polarity N Channel Centres fixing 31.6 mm Current Id cont. 250 A Current Idm pulse 750 A Voltage isolation 2.5 kV |
SGS Thomson Microelectronics |
| 67 |
STE250N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE |
ST Microelectronics |
| 68 |
STP50N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 69 |
STP50N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 70 |
STP50N06FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 71 |
STP50N06L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 72 |
STP50N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 73 |
STP50N06LFI |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 74 |
STP50N06LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 75 |
SUD50N06-07L |
MOSFETs |
Vishay |
| 76 |
SUD50N06-09L |
N-Channel 60-V (D-S), 175C MOSFET, Logic Level |
Vishay |
| 77 |
SUD50N06-12 |
N-Channel 60-V (D-S) 175C MOSFET |
Vishay |
| 78 |
SUD50N06-16 |
N-Channel 60-V (D-S) 175C MOSFET |
Vishay |
| 79 |
SUM50N06-16L |
N-Channel 60-V (D-S), 175C MOSFET, Logic Level |
Vishay |
| | | |
