| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N4762P/TR12 |
Zener Voltage Regulator Diode |
Microsemi |
| 62 |
1N4762P/TR8 |
Zener Voltage Regulator Diode |
Microsemi |
| 63 |
1N4762Pe3/TR12 |
Zener Voltage Regulator Diode |
Microsemi |
| 64 |
1N4762Pe3/TR8 |
Zener Voltage Regulator Diode |
Microsemi |
| 65 |
1N6762 |
Dual Ultrafast Rectifier |
Microsemi |
| 66 |
1N6762 |
JANTX, JANTXV POWER DUAL RECTIFIERS IN A TO-254AA PACKAGE QUALIFIED TO MIL-PRF-19500/642 |
Omnirel |
| 67 |
1N6762R |
Dual Ultrafast Rectifier |
Microsemi |
| 68 |
1N6762R |
JANTX, JANTXV POWER DUAL RECTIFIERS IN A TO-254AA PACKAGE QUALIFIED TO MIL-PRF-19500/642 |
Omnirel |
| 69 |
1N762 |
Zener Diode |
Motorola |
| 70 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 71 |
1SMA4762 |
Zener: |
Taiwan Semiconductor |
| 72 |
1SMA4762 |
82 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
| 73 |
1SMA4762 |
SURFACE MOUNT SILICON ZENER DIODE |
TRSYS |
| 74 |
2N1762 |
Germanium PNP Transistor |
Motorola |
| 75 |
2N1762 |
Germanium PNP Power Transistor, MS7 (spacesaver) Package |
Silicon Transistor Corporation |
| 76 |
2N2762 |
Silicon NPN Transistor |
Motorola |
| 77 |
2N3762 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 78 |
2N3762 |
PNP Transistor |
Microsemi |
| 79 |
2N3762 |
Medium-current PNP silicon annular transistor |
Motorola |
| 80 |
2N3762 |
Silicon PNP Transistor |
Motorola |
| 81 |
2N3762 |
Trans GP BJT PNP 40V 1.5A 3-Pin TO-39 |
New Jersey Semiconductor |
| 82 |
2N3762 |
Type 2N3762 Geometry 6706 Polarity PNP |
Semicoa Semiconductor |
| 83 |
2N3762 |
Type 2N3762 Geometry 6706 Polarity PNP |
Semicoa Semiconductor |
| 84 |
2N3762L |
PNP Transistor |
Microsemi |
| 85 |
2N3762L |
Type 2N3762L Geometry 6706 Polarity PNP |
Semicoa Semiconductor |
| 86 |
2N3762L |
Type 2N3762L Geometry 6706 Polarity PNP |
Semicoa Semiconductor |
| 87 |
2N6762 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
| 88 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 89 |
2N6762 |
500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package |
International Rectifier |
| 90 |
2N6762 |
N-Channel |
Microsemi |
| | | |
