| No. |
Part Name |
Description |
Manufacturer |
| 61 |
BCR20AM-12L |
Triac 20 Ampere/400-600 Volts |
Powerex Power Semiconductors |
| 62 |
BCR20AM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 63 |
BCR20AM-8 |
Triac 20 Ampere/400-600 Volts |
Powerex Power Semiconductors |
| 64 |
BCR20AM-8L |
Triac 20 Ampere/400-600 Volts |
Powerex Power Semiconductors |
| 65 |
BCR20B |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
Mitsubishi Electric Corporation |
| 66 |
BCR20B-10 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 67 |
BCR20B-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 68 |
BCR20C |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
Mitsubishi Electric Corporation |
| 69 |
BCR20C-10 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 70 |
BCR20C-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 71 |
BCR20E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE |
Mitsubishi Electric Corporation |
| 72 |
BCR20KM |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 73 |
BCR22 |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit/ inverter/ interface circuit/ drive circuit) |
Siemens |
| 74 |
BCR22PN |
Dual Built-in Resistor AF Transistors; NPN/PNP; Industrial Standars Types, Icmax of 100mA; Vceo of 50V |
Infineon |
| 75 |
BCR22PN |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit) |
Siemens |
| 76 |
BCR22PNE6327 |
Digital Transistors - SOT363 package |
Infineon |
| 77 |
BCR25A |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 78 |
BCR25B |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 79 |
BCR2PM |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE |
Mitsubishi Electric Corporation |
| 80 |
BCR2PM-12 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 81 |
BCR2PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 82 |
CCR250 |
CURRENT REGULATOR CHIPS |
Compensated Devices Incorporated |
| 83 |
CCR250 |
Current Limiter Diode |
Microsemi |
| 84 |
CCR251 |
CURRENT REGULATOR CHIPS |
Compensated Devices Incorporated |
| 85 |
CCR251 |
Current Limiter Diode |
Microsemi |
| 86 |
CCR252 |
CURRENT REGULATOR CHIPS |
Compensated Devices Incorporated |
| 87 |
CCR252 |
Current Limiter Diode |
Microsemi |
| 88 |
CCR253 |
CURRENT REGULATOR CHIPS |
Compensated Devices Incorporated |
| 89 |
CCR253 |
Current Limiter Diode |
Microsemi |
| 90 |
CCR254 |
CURRENT REGULATOR CHIPS |
Compensated Devices Incorporated |
| | | |
