| No. |
Part Name |
Description |
Manufacturer |
| 61 |
IRF630NL |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 62 |
IRF630NLPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 63 |
IRF630NPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 64 |
IRF630NS |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 65 |
IRF630NSPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 66 |
IRF630NSTRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 67 |
IRF630NSTRLPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 68 |
IRF630NSTRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 69 |
IRF630NSTRR |
Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R |
New Jersey Semiconductor |
| 70 |
IRF630S |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 71 |
IRF630S |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
New Jersey Semiconductor |
| 72 |
IRF630S |
N-channel TrenchMOS transistor |
Philips |
| 73 |
IRF630S |
N - CHANNEL 200V - 0.35 Ohm -9A-D 2 PAK MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
| 74 |
IRF630S |
N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET |
ST Microelectronics |
| 75 |
IRF630SPBF |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 76 |
IRF630ST4 |
N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET |
ST Microelectronics |
| 77 |
IRF630STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 78 |
IRF630STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 79 |
IRHLF630Z4 |
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package |
International Rectifier |
| 80 |
KF630A |
NPN transistor for RF amplifiers |
Tesla Elektronicke |
| 81 |
KF630B |
NPN transistor for RF amplifiers |
Tesla Elektronicke |
| 82 |
KF630C |
NPN transistor for RF amplifiers |
Tesla Elektronicke |
| 83 |
KF630D |
NPN transistor for RF amplifiers |
Tesla Elektronicke |
| 84 |
KF630S |
NPN transistor for RF amplifiers |
Tesla Elektronicke |
| 85 |
MRF630 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 86 |
MRF630 |
NPN Silicon RF Power Transistor 3.0W 470MHz |
Motorola |
| 87 |
NX8562LF630-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1563.04 nm. Frequency 191.80 THz. Anode floating. FC-PC connector. |
NEC |
| 88 |
NX8563LF630-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1563.04 nm. Frequency 191.80 THz. FC-PC connector. Anode floating. |
NEC |
| 89 |
PB-IRF630NL |
Leaded 200V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 90 |
PB-IRF630NS |
Leaded 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
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