| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2SA237 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 62 |
2SA28 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 63 |
2SA29 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 64 |
2SA304 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 65 |
2SA305 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 66 |
2SA472-1 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 67 |
2SA472-2 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 68 |
2SA472-3 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 69 |
2SA472-4 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 70 |
2SA472-5 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 71 |
2SA472-6 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 72 |
2SA49 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 73 |
2SA52 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 74 |
2SA53 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 75 |
2SA72 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 76 |
2SA73 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 77 |
2SB1318 |
Darlington Transistor BUILT-IN DUMPER DIODE AT E-C |
NEC |
| 78 |
2SC370 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 79 |
2SC371 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 80 |
2SC372 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 81 |
2SC373 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 82 |
2SC374 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 83 |
2SC5351 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATIONS FOR BATTERY CHARGER AND POWER SUPPLY. |
TOSHIBA |
| 84 |
2SD1154 |
Si NPN epitaxial. Horizontal deflection output for B/W TV set. |
Panasonic |
| 85 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
| 86 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 87 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 88 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 89 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 90 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| | | |
