| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N707A |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 62 |
2N741 |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 63 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 64 |
2N915 |
Silicon NPN planar RF transistor for non-saturating switching circuits, RF amplifiers and oscillator circuits |
AEG-TELEFUNKEN |
| 65 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
| 66 |
2N918 |
Silicon NPN epitaxial planar transistor for UHF amplifiers and oscillators |
AEG-TELEFUNKEN |
| 67 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 68 |
2N918 |
Epitaxial planar NPN transistor designed High-Frequency oscillators and amplifiers |
SGS-ATES |
| 69 |
2N918 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 70 |
2N918 |
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS |
ST Microelectronics |
| 71 |
2SA1778 |
PNP Epitaxial Planar Silicon Transistor VHF Converter, Local Oscillator Applications |
SANYO |
| 72 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 73 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 74 |
2SC1009 |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 75 |
2SC1009A |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 76 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
| 77 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 78 |
2SC2347 |
Transistor Silicon NPN Epitaxial Planar Type TV UHF Oscillator Applications TV VHF Mixer Applications |
TOSHIBA |
| 79 |
2SC2349 |
Transistor Silicon NPN Epitaxial Planar Type TV VHF Oscillator Applications |
TOSHIBA |
| 80 |
2SC2731 |
UHF TV TUNER FREQUENCY CONVERTER, LOCAL OSCILLATOR AND WIDE BAND AMPLIFIER |
Hitachi Semiconductor |
| 81 |
2SC2951 |
The ASI 2SC2951 is a High Frequency Transistor Designed for General Purpose Oscillator Applications up to 10 GHz. |
Advanced Semiconductor |
| 82 |
2SC3121 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base) |
TOSHIBA |
| 83 |
2SC3124 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, VHF Oscillator Applications |
TOSHIBA |
| 84 |
2SC313 |
Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator |
Hitachi Semiconductor |
| 85 |
2SC313H |
Silicon NPN Epitaxial Planar Transistor, intended for use in UHF Tuner Local Oscillator |
Hitachi Semiconductor |
| 86 |
2SC3501 |
VHF AMPLIFIER VHF TV TUNER MIXER, OSCILLATOR |
Hitachi Semiconductor |
| 87 |
2SC3547 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER/ UHF OSCILLATOR APPLICATIONS)(COMMON COLLECTOR) |
TOSHIBA |
| 88 |
2SC3547A |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common collector) |
TOSHIBA |
| 89 |
2SC3547B |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common collector) |
TOSHIBA |
| 90 |
2SC3770 |
NPN Epitaxial Planar Silicon Transistor UHF, VHF Oscillator Mixer, HF Amplifier Applications |
SANYO |
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