No. |
Part Name |
Description |
Manufacturer |
61 |
BU807 |
400 V, 8 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
62 |
C9658 |
MICROCONTROLLER |
Samsung Electronic |
63 |
CL10B224 |
Multilayer Ceramic Capacitor |
Samsung Electronic |
64 |
CL21C220 |
Multilayer Ceramic Capacitor |
Samsung Electronic |
65 |
CM-1429 |
P.C.B Circuit Diagram |
Samsung Electronic |
66 |
CM-1829 |
P.C.B Circuit Diagram |
Samsung Electronic |
67 |
CM1419 |
8-2 P.C.B Circuit Diagram |
Samsung Electronic |
68 |
CM1429 |
8-2 P.C.B Circuit Diagram |
Samsung Electronic |
69 |
CM1819 |
8-2 P.C.B Circuit Diagram |
Samsung Electronic |
70 |
CM1829 |
8-2 P.C.B Circuit Diagram |
Samsung Electronic |
71 |
CM1829-1429 |
P.C.B Circuit Diagram |
Samsung Electronic |
72 |
CMOS DRAM |
EDO Mode, x4 and x8 Device Timing Diagram |
Samsung Electronic |
73 |
CMOS SDRAM |
CMOS SDRAM Device Operations |
Samsung Electronic |
74 |
CW5322X |
SDH104 |
Samsung Electronic |
75 |
DA22497 |
FM FRONT END |
Samsung Electronic |
76 |
DA22497D |
FM FRONT END |
Samsung Electronic |
77 |
DDRSDRAM |
DDR SDRAM Specification Version 0.61 |
Samsung Electronic |
78 |
DDRSDRAM1111 |
DDR SDRAM Specification Version 1.0 |
Samsung Electronic |
79 |
DIRECT RDRAM |
Direct RDRAM� Device Operation |
Samsung Electronic |
80 |
DS_K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
81 |
DS_K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
82 |
DS_K4D263238D |
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL |
Samsung Electronic |
83 |
DS_K4S161622D |
1M x 16 SDRAM |
Samsung Electronic |
84 |
DS_K4S161622E |
1M x 16 SDRAM |
Samsung Electronic |
85 |
DS_K6F1016U4C |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
86 |
DS_K6F2008U2E |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
87 |
DS_K6F2016U4E |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
88 |
DS_K6F3216T6M |
2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
89 |
DS_K6F4016U6G |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
90 |
DS_K6F8016U6B |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
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