No. |
Part Name |
Description |
Manufacturer |
91 |
2N6081 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
92 |
2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
93 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
94 |
2SA1295 |
Trans GP BJT PNP 230V 17A 3-Pin MT-200 Bulk |
New Jersey Semiconductor |
95 |
2SA1943 |
Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PL |
New Jersey Semiconductor |
96 |
2SA1962 |
Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
97 |
2SA1986 |
Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
98 |
2SA1987 |
Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PL |
New Jersey Semiconductor |
99 |
2SA2031 |
PNP Epitaxial Planar Silicon Transistor 230V / 15A, AF100W Output Applications |
SANYO |
100 |
2SA2151A |
Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3P Bulk |
New Jersey Semiconductor |
101 |
2SC5200 |
Trans GP BJT NPN 230V 15A 3-Pin TO-264 Tube |
New Jersey Semiconductor |
102 |
2SC5210 |
500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE. |
Isahaya Electronics Corporation |
103 |
2SC5486 |
600mW Lead frame NPN transistor, maximum rating: 10V Vceo, 5A Ic, 230 to 600 hFE. |
Isahaya Electronics Corporation |
104 |
2SC5669 |
NPN Triple Diffused Planar Silicon Transistor 230V / 15A, AF100W Output Applications |
SANYO |
105 |
524V13 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 216 V @ 1mA DC test current. |
NTE Electronics |
106 |
524V15 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 240 V @ 1mA DC test current. |
NTE Electronics |
107 |
524V17 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 270 V @ 1mA DC test current. |
NTE Electronics |
108 |
524V25 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
109 |
524V27 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
110 |
524V30 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
111 |
524V42 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 680 V @ 1mA DC test current. |
NTE Electronics |
112 |
524V48 |
Metal oxide varistor. Case diameter 23 mm. Nominal varistor voltage 750 V @ 1mA DC test current. |
NTE Electronics |
113 |
5LP01M |
P-Channel Small Signal MOSFET -50V, -0.07A, 23 Ohm, Single MCP |
ON Semiconductor |
114 |
80143 |
1 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
115 |
A36-1 |
100 TO 2300 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
116 |
AB-120 |
HOW TO GET 23 BITS OF EFFECTIVE RESOLUTION FROM YOUR 24-BIT CONVERTER |
Burr Brown |
117 |
AD5040 |
Full Accurate 3 V/5 V 14-Bit Vout nanoDAC™ Converter, Output Buffered, in a Sot 23 |
Analog Devices |
118 |
AD5040BRJZ-500RL7 |
Full Accurate 3 V/5 V 14-Bit Vout nanoDAC™ Converter, Output Buffered, in a Sot 23 |
Analog Devices |
119 |
AD5040BRJZ-REEL7 |
Full Accurate 3 V/5 V 14-Bit Vout nanoDAC™ Converter, Output Buffered, in a Sot 23 |
Analog Devices |
120 |
AD5060 |
Full Accurate 3 V/5 V 16-Bit Vout nanoDAC™ Converter, Output Buffered, in a Sot 23 |
Analog Devices |
| | | |