| No. |
Part Name |
Description |
Manufacturer |
| 91 |
1N4528 |
Rectifier Diode 800V 35A |
Motorola |
| 92 |
1N4529 |
Rectifier Diode 1000V 35A |
Motorola |
| 93 |
1N4530 |
Rectifier Diode 1200V 35A |
Motorola |
| 94 |
1N5332 |
Rectifier Diode 1200V 35A |
Motorola |
| 95 |
1N5391G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 50 V, max RMS voltage 35 V, max D. C blocking voltage 50 V. |
Jinan Gude Electronic Device |
| 96 |
1N5829 |
25 Amp Schottky Barrier Rectifier 20 to 35 Volts |
Micro Commercial Components |
| 97 |
1N5830 |
25 Amp Schottky Barrier Rectifier 20 to 35 Volts |
Micro Commercial Components |
| 98 |
1N5831 |
25A, 35V ultra fast recovery rectifier |
MCC |
| 99 |
1N5831 |
25 Amp Schottky Barrier Rectifier 20 to 35 Volts |
Micro Commercial Components |
| 100 |
1N6122 |
Diode TVS Single Bi-Dir 35.8V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 101 |
1N6122A |
Diode TVS Single Bi-Dir 35.8V 500W 2-Pin |
New Jersey Semiconductor |
| 102 |
1N6158 |
Diode TVS Single Bi-Dir 35.8V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 103 |
1N6158A |
Diode TVS Single Bi-Dir 35.8V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 104 |
2020-350 |
Delay 350 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 105 |
2021-350 |
Delay 350 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 106 |
20FQ035 |
V(rwm): 35V; 30A dual schottky power rectifier |
International Rectifier |
| 107 |
20FQ035 |
Diode Schottky 35V 30A 2-Pin DO-4 |
New Jersey Semiconductor |
| 108 |
21FQ035 |
V(rrm): 35V; 30A schottky power rectifier |
International Rectifier |
| 109 |
22RIA140 |
1400V 35A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
| 110 |
22RIA160 |
1600V 35A Phase Control SCR in a TO-208AA (TO-48) package |
International Rectifier |
| 111 |
27C256E350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
| 112 |
27C256Q350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
| 113 |
2CK48 |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 114 |
2CK48A |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 115 |
2CK48B |
SILICON EPITAXIAL PLANAR SWITCHING DIODE REVERSE VOLTAGE: 35-60-90V FORWARD CURRENT: 150mA |
Shanghai Sunrise Electronics |
| 116 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 117 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 118 |
2N2800 |
Trans GP BJT PNP 35V 0.8A |
New Jersey Semiconductor |
| 119 |
2N2801 |
Trans GP BJT PNP 35V 0.8A |
New Jersey Semiconductor |
| 120 |
2N2896 |
1.800W General Purpose NPN Metal Can Transistor. 90V Vceo, 1.000A Ic, 35 hFE. |
Continental Device India Limited |
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