Datasheets for 100M

Datasheets found :: 5371

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No.	Part Name	Description	Manufacturer
91	2N2947	NPN silicon annular transistor for power amplifier applications to 100MHz	Motorola
92	2N2948	NPN silicon annular transistor for power amplifier applications to 100MHz	Motorola
93	2N2949	NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case	Motorola
94	2N2950	NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case	Motorola
95	2N3390	NPN silicon transistor. 25V, 100mA.	General Electric Solid State
96	2N3391	NPN silicon transistor. 25V, 100mA.	General Electric Solid State
97	2N3391A	NPN silicon transistor. 25V, 100mA.	General Electric Solid State
98	2N3392	NPN silicon transistor. 25V, 100mA.	General Electric Solid State
99	2N3393	NPN silicon transistor. 25V, 100mA.	General Electric Solid State
100	2N3394	NPN silicon transistor. 25V, 100mA.	General Electric Solid State
101	2N3859	Planar epitaxial passivated NPN silicon transistor. 30V, 100mA.	General Electric Solid State
102	2N3859A	Planar epitaxial passivated NPN silicon transistor. 60V, 100mA.	General Electric Solid State
103	2N3860	Planar epitaxial passivated NPN silicon transistor. 30V, 100mA.	General Electric Solid State
104	2N5172	NPN silicon transistor. 25V, 100mA.	General Electric Solid State
105	2N5232	Planar epitaxial passivated NPN silicon transistor. 50V, 100mA.	General Electric Solid State
106	2N5232A	Planar epitaxial passivated NPN silicon transistor. 50V, 100mA.	General Electric Solid State
107	2N5249	Planar epitaxial passivated NPN silicon transistor. 50V, 100mA.	General Electric Solid State
108	2N5249A	Planar epitaxial passivated NPN silicon transistor. 50V, 100mA.	General Electric Solid State
109	2N5583	PNP silicon high frequency transistor 1.3GHz - 100mAdc	Motorola
110	2N5837	NPN silicon high frequency transistor 1.7GHz - 100mAdc	Motorola
111	2N6076	PNP silicon transistor. 25V, 100mA.	General Electric Solid State
112	2SA1995	450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE.	Isahaya Electronics Corporation
113	2SAR340P	PNP -100mA -400V Middle Power Transistor	ROHM
114	2SAR340PT100	PNP -100mA -400V Middle Power Transistor	ROHM
115	2SAR340Q	PNP -100mA -400V Middle Power Transistor	ROHM
116	2SAR340QTR	PNP -100mA -400V Middle Power Transistor	ROHM
117	2SC3245	900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285	Isahaya Electronics Corporation
118	2SC3245A	900mW Lead frame NPN transistor, maximum rating: 150V Vceo, 100mA Ic, 150 to 500 hFE. Complementary 2SA1285A	Isahaya Electronics Corporation
119	2SC3675	NPN Triple Diffused Planar Silicon Transistor 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications	SANYO
120	2SC4630LS	NPN Triple Diffused Planar Silicon Transistor 900V / 100mA High-Voltage Amplifier, High-Voltage Switching Applications	SANYO

Datasheets found :: 5371

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