No. |
Part Name |
Description |
Manufacturer |
91 |
F1516 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
92 |
GMS81516 |
HYUNDAI MicroElectronic, single chip microcomputer designed CMOS technology. ROM 16K bytes. RAM 448 bytes. |
Hynix Semiconductor |
93 |
GMS81516A |
USERS MANUAL |
Hynix Semiconductor |
94 |
GMS81516B |
8-BIT SINGLE-CHIP MICROCONTROLLERS |
Hynix Semiconductor |
95 |
GMS81516B K |
HYUNDAI MICRO ELECTRONICS 8-BIT SINGLE-CHIP MICROCONTROLLERS |
Hynix Semiconductor |
96 |
GMS81516B LQ |
HYUNDAI MICRO ELECTRONICS 8-BIT SINGLE-CHIP MICROCONTROLLERS |
Hynix Semiconductor |
97 |
GMS81516BK |
8-BIT SINGLE-CHIP MICROCONTROLLERS |
Hynix Semiconductor |
98 |
GMS81516BLQ |
8-BIT SINGLE-CHIP MICROCONTROLLERS |
Hynix Semiconductor |
99 |
GMS81516BQ |
8-BIT SINGLE-CHIP MICROCONTROLLERS |
Hynix Semiconductor |
100 |
GMS81516BT |
ROM/RAM size:16 Kb/448 bytes, 1-10 MHz, 2.2-5.5 V, 8 BIT single chip microcontroller |
Hynix Semiconductor |
101 |
GMS81516BT LQ |
HYUNDAI MICRO ELECTRONICS 8-BIT SINGLE-CHIP MICROCONTROLLERS |
Hynix Semiconductor |
102 |
GMS81516BTK |
8-BIT SINGLE-CHIP MICROCONTROLLERS |
Hynix Semiconductor |
103 |
GMS81516BTLQ |
8-BIT SINGLE-CHIP MICROCONTROLLERS |
Hynix Semiconductor |
104 |
GMS81516BTQ |
8-BIT SINGLE-CHIP MICROCONTROLLERS |
Hynix Semiconductor |
105 |
IDT72V15160 |
4K x 16 Multimedia FIFO, 3.3V |
IDT |
106 |
IDT72V15160L10PFI |
4K x 16 Multimedia FIFO, 3.3V |
IDT |
107 |
IDT72V15160L10PFI8 |
4K x 16 Multimedia FIFO, 3.3V |
IDT |
108 |
IDT72V15165 |
4K x 16 Multimedia FIFO, 3.3V |
IDT |
109 |
IDT72V15165L15TFI |
4K x 16 Multimedia FIFO, 3.3V |
IDT |
110 |
IDT72V15165L15TFI8 |
4K x 16 Multimedia FIFO, 3.3V |
IDT |
111 |
K4E151611 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
112 |
K4E151611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
113 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
114 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
115 |
K4E151612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
116 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
117 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
118 |
K4F151611 |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
119 |
K4F151611D |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
120 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
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