No. |
Part Name |
Description |
Manufacturer |
91 |
HB288256C6 |
Compact Flash |
Hitachi Semiconductor |
92 |
HB28B256C6 |
Compact Flash |
Hitachi Semiconductor |
93 |
HM10G001 |
256CH TFT-LCD GATE DRIVER SPECIFICATION |
Hynix Semiconductor |
94 |
HM62V16256C |
4 M SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
95 |
HM62V16256CI |
Wide Temperature Range Version4 M SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
96 |
HM62V16256CLBP-5 |
Memory>Low Power SRAM |
Renesas |
97 |
HM62V16256CLBP-5SL |
Memory>Low Power SRAM |
Renesas |
98 |
HM62V16256CLBP-7 |
Memory>Low Power SRAM |
Renesas |
99 |
HM62V16256CLBP-7SL |
Memory>Low Power SRAM |
Renesas |
100 |
HM62V16256CLBP/CLBP-XXSL |
Low Power SRAMs |
Hitachi Semiconductor |
101 |
HM62V16256CLTT-5 |
4 M SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
102 |
HM62V16256CLTT-5 |
Memory>Low Power SRAM |
Renesas |
103 |
HM62V16256CLTT-5SL |
4 M SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
104 |
HM62V16256CLTT-5SL |
Memory>Low Power SRAM |
Renesas |
105 |
HM62V16256CLTT-7 |
4 M SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
106 |
HM62V16256CLTT-7SL |
4 M SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
107 |
HM62V16256CLTT/CLTT-XXSL |
Low Power SRAMs |
Hitachi Semiconductor |
108 |
HM62V16256CLTTI |
Low Power SRAMs |
Hitachi Semiconductor |
109 |
HM62V16256CLTTI-7 |
Wide Temperature Range Version4 M SRAM (256-kword x 16-bit) |
Hitachi Semiconductor |
110 |
HM62V16256CLTTI-7 |
Memory>Low Power SRAM |
Renesas |
111 |
IP4256CZ3-M |
Single and dual-channel passive filter network with ESD protection |
NXP Semiconductors |
112 |
IP4256CZ5-W |
Single and dual-channel passive filter network with ESD protection |
Nexperia |
113 |
IP4256CZ5-W |
Single and dual-channel passive filter network with ESD protection |
NXP Semiconductors |
114 |
IP4256CZ6-F |
Single and dual-channel passive filter network with ESD protection |
NXP Semiconductors |
115 |
KM44C256C-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
116 |
KM44C256C-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
117 |
KM44C256C-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
118 |
KM44C256CL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
119 |
KM44C256CL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
120 |
KM44C256CL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
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