| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N3904TF |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 92 |
2N3904TFR |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 93 |
2N3904U |
Switching Transistor |
Korea Electronics (KEC) |
| 94 |
2N3904ZL1 |
General Purpose Transistors |
ON Semiconductor |
| 95 |
2N3904ZL1 |
General Purpose Transistors |
ON Semiconductor |
| 96 |
2N3904_D10Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 97 |
2N3904_D28Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 98 |
2N3904_D81Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 99 |
2N3904_J05Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 100 |
2N3904_J18Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 101 |
2N3904_J25Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 102 |
2N3904_J61Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 103 |
2N3905 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 104 |
2N3905 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 30 - hFE |
Continental Device India Limited |
| 105 |
2N3905 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 106 |
2N3905 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 107 |
2N3905 |
Low Noise PNP Transistor |
FERRANTI |
| 108 |
2N3905 |
Switching PNP transistor |
FERRANTI |
| 109 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 110 |
2N3905 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
| 111 |
2N3905 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 112 |
2N3905 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 113 |
2N3905 |
PNP silicon annular transistor, TO-92 case |
Motorola |
| 114 |
2N3905 |
Silicon PNP Transistor |
Motorola |
| 115 |
2N3905 |
PNP Silicon Transistor |
NEC |
| 116 |
2N3905 |
General Purpose Transistors(PNP Silicon) |
ON Semiconductor |
| 117 |
2N3905 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 118 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 119 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 120 |
2N3905-D |
General Purpose Transistors PNP Silicon |
ON Semiconductor |
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