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Datasheets for 60

Datasheets found :: 5734
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No. Part Name Description Manufacturer
91 1N462A 60 V, 500 mW general purpose high conductance diode BKC International Electronics
92 1N4760 G Zener Voltage Regulator Diode Microsemi
93 1N4760 P Zener Voltage Regulator Diode Microsemi
94 1N480 60 V, 500 mA, gold bonded germanium diode BKC International Electronics
95 1N498 60 V, 500 mA, gold bonded germanium diode BKC International Electronics
96 1N5264A 60 V, 2.1 mA, zener diode Leshan Radio Company
97 1N5264AUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. Tolerance +-10%. Microsemi
98 1N5264BUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. Tolerance +-5%. Microsemi
99 1N5264C 60 V, 2.1 mA, zener diode Leshan Radio Company
100 1N5264D 60 V, 2.1 mA, zener diode Leshan Radio Company
101 1N5264UR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. Microsemi
102 1N5277AUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 160 V. Tolerance +-10%. Microsemi
103 1N5277BUR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 160 V. Tolerance +-5%. Microsemi
104 1N5277UR-1 Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 160 V. Microsemi
105 1N53 Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB Motorola
106 1N5371B 60 V, 20 mA, 5 W glass passivated zener diode Fagor
107 1N5371B 60 V, 5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
108 1N5384B 160 V, 8 mA, 5 W glass passivated zener diode Fagor
109 1N5384B 160 V, 5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
110 1N5398G 1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. Jinan Gude Electronic Device
111 1N53A Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB Motorola
112 1N53B Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB Motorola
113 1N53C Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB Motorola
114 1N53D Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB Motorola
115 1N5954 1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-20% tolerance. Jinan Gude Electronic Device
116 1N5954A 1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-10% tolerance. Jinan Gude Electronic Device
117 1N5954B 160 V, 1.5 W, glass passivated junction silicon zener diode TRANSYS Electronics Limited
118 1N5954C 1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-2% tolerance. Jinan Gude Electronic Device
119 1N5954D 1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-1% tolerance. Jinan Gude Electronic Device
120 1N6263 60 V, 400 mW silicon schottky barrier diode BKC International Electronics


Datasheets found :: 5734
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