No. |
Part Name |
Description |
Manufacturer |
91 |
1N462A |
60 V, 500 mW general purpose high conductance diode |
BKC International Electronics |
92 |
1N4760 G |
Zener Voltage Regulator Diode |
Microsemi |
93 |
1N4760 P |
Zener Voltage Regulator Diode |
Microsemi |
94 |
1N480 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
95 |
1N498 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
96 |
1N5264A |
60 V, 2.1 mA, zener diode |
Leshan Radio Company |
97 |
1N5264AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. Tolerance +-10%. |
Microsemi |
98 |
1N5264BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. Tolerance +-5%. |
Microsemi |
99 |
1N5264C |
60 V, 2.1 mA, zener diode |
Leshan Radio Company |
100 |
1N5264D |
60 V, 2.1 mA, zener diode |
Leshan Radio Company |
101 |
1N5264UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 60 V. |
Microsemi |
102 |
1N5277AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 160 V. Tolerance +-10%. |
Microsemi |
103 |
1N5277BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 160 V. Tolerance +-5%. |
Microsemi |
104 |
1N5277UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 160 V. |
Microsemi |
105 |
1N53 |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
106 |
1N5371B |
60 V, 20 mA, 5 W glass passivated zener diode |
Fagor |
107 |
1N5371B |
60 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
108 |
1N5384B |
160 V, 8 mA, 5 W glass passivated zener diode |
Fagor |
109 |
1N5384B |
160 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
110 |
1N5398G |
1.5 A, glass passivated rectifier. Max recurrent peak reverse voltage 800 V, max RMS voltage 560 V, max D. C blocking voltage 800 V. |
Jinan Gude Electronic Device |
111 |
1N53A |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
112 |
1N53B |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
113 |
1N53C |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
114 |
1N53D |
Silicon Signal Diode - Microwave Ka-band Mixer f=34,860 MHz NF=13.1 to 9.0 dB |
Motorola |
115 |
1N5954 |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
116 |
1N5954A |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
117 |
1N5954B |
160 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
118 |
1N5954C |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
119 |
1N5954D |
1.5 W, silicon zener diode. Zener voltage 160 V. Test current 2.3 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
120 |
1N6263 |
60 V, 400 mW silicon schottky barrier diode |
BKC International Electronics |
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