| No. |
Part Name |
Description |
Manufacturer |
| 91 |
NTE596 |
Silicon Diode, Dual, Common Anode, High Speed |
NTE Electronics |
| 92 |
NTE5962 |
Silicon Power Rectifier Diode, 25 Amp |
NTE Electronics |
| 93 |
NTE5963 |
Silicon Power Rectifier Diode, 25 Amp |
NTE Electronics |
| 94 |
NTE5966 |
Silicon Power Rectifier Diode, 25 Amp |
NTE Electronics |
| 95 |
NTE5967 |
Silicon Power Rectifier Diode, 25 Amp |
NTE Electronics |
| 96 |
NTE597 |
Silicon Rectifier Ultra Fast, 200V, 8A |
NTE Electronics |
| 97 |
NTE598 |
Silicon Rectifier Ultra Fast, 600V, 8A |
NTE Electronics |
| 98 |
NTE5980 |
Silicon Power Rectifier Diode, 40 Amp |
NTE Electronics |
| 99 |
NTE5981 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 40A. |
NTE Electronics |
| 100 |
NTE5982 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 40A. |
NTE Electronics |
| 101 |
NTE5983 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 40A. |
NTE Electronics |
| 102 |
NTE5986 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 40A. |
NTE Electronics |
| 103 |
NTE5987 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 40A. |
NTE Electronics |
| 104 |
NTE5988 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 40A. |
NTE Electronics |
| 105 |
NTE5989 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 40A. |
NTE Electronics |
| 106 |
NTE599 |
Silicon Rectifier Ultra Fast, 200V, 15A |
NTE Electronics |
| 107 |
NTE5990 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. |
NTE Electronics |
| 108 |
NTE5991 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A. |
NTE Electronics |
| 109 |
NTE5992 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 40A. |
NTE Electronics |
| 110 |
NTE5993 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 40A. |
NTE Electronics |
| 111 |
NTE5994 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 40A. |
NTE Electronics |
| 112 |
NTE5995 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 40A. |
NTE Electronics |
| 113 |
NTE5998 |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A. |
NTE Electronics |
| 114 |
NTE5999 |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 40A. |
NTE Electronics |
| 115 |
NX8564LE597-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1559.79 nm. Frequency 192.20 THz. FC-UPC connector. |
NEC |
| 116 |
NX8564LE597-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1559.79 nm. Frequency 192.20 THz. SC-UPC connector. |
NEC |
| 117 |
NX8565LE597-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1559.79 nm. Frequency 192.20 THz. FC-UPC connector. |
NEC |
| 118 |
NX8565LE597-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1559.79 nm. Frequency 192.20 THz. SC-UPC connector. |
NEC |
| 119 |
NX8566LE597-BC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1559.79 nm. Frequency 192.20 THz. FC-UPC connector. |
NEC |
| 120 |
NX8566LE597-CC |
EA modulator integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1559.79 nm. Frequency 192.20 THz. SC-UPC connector. |
NEC |
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